Samsung Electronics Co., Ltd.

Lg Electronics Inc.

L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

Seagate Technology International

Joo-ho Lee

Chang-seung Lee

Yong-sung Kim

Hae-seok Park

In-sang Song

Chang-youl Moon

Jeo-young Shim

Seog-woo Hong

Sang-Hun Lee

Kyoung-won Na

Byeoung-ju Ha

Tae-han Jeon

Yong-Seok Jung

Hyung Ki Choi

Dong-ho Lee

Chan-Wook Baik

Kook-hyun Sunwoo

Kun-sun Eom

Sung-Hee Lee

Mi-jeong Song

David Seo

Dong-kyun Kim

Jae-Soon Lim

Youn-Joung Cho

Yong Sung Kim

Jun-sik Hwang

Duck-hwan Kim

Jeong-yub Lee

Jun-hee Choi

Seok-Whan Chung

Eun-sik Kim

Hyun-Jae Song

Gyu-Hee Park

Xianyu Wenxu

Sang-hun Lee

Julien Lieffrig

Yong-young Park

Hee-jeong Jeong

Hyung Woo Choi

Jun-seong Kim

Young Bae Kim

Hyung-bin Son

Woo-young Yang

Hyun-Suk Yang

Jae-chul Shim

Sang-chul Sul

Byeong-ju Ha

Young Jun Yun

Clement Lansalot

Won-tae Noh

Bong-Kuk Hong

Deok-Yong Chung

Myeong-kwon Gu

Jae-shik Shin

Kwang-jae Shin

Hao-seok Park

A method of forming a thin film includes forming a niobium-containing film on a substrate by using a niobium precursor composition and a reactant, the niobium precursor composition including a niobium compound represented by Formula (1):Nb(RCp)(L)&#x2003;&#x2003;Formula (1)

Methods of forming thin film and fabricating integrated circuit device using niobium compound

Provided are a nanopore device with resolution improved by graphene nanopores, and a method of manufacturing the same. The nanopore device includes: a first insulating layer; a graphene layer disposed on the first insulating layer and having a nanopore formed at a center portion of the graphene layer; and first and second electrode layers disposed respectively at both sides of the nanopore on a top surface of the graphene layer, wherein a center region of the first insulating layer is removed such that the center portion of the graphene layer is exposed to the outside.

Nanopore device including graphene nanopore and method of manufacturing the same

A nanogap device which may include a first insulation layer having a nanopore formed therein, a first channel layer which may be on the first insulation layer, a first source electrode and a first drain electrode which may be respectively in contact with both ends of the first channel layer, a second insulation layer which may cover the first channel layer, the first source electrode, and the first drain electrode, and a first nanogap electrode which may be on the second insulation layer and may be divided into two parts with a nanogap, which faces the nanopore, interposed between the two parts.

Nanogap device and method of processing signal from the nanogap device

Nanosensors including graphene and methods of manufacturing the same. A nanosensor includes a first insulating layer in which a first nanopore is formed; a graphene layer that is disposed on the first insulating layer and having a second nanopore or a nanogap formed therein adjacent to the first nanopore; and a marker element that is disposed adjacent to the graphene layer and identifies a position of the graphene layer.

Nanosensors including graphene and methods of manufacturing the same

Transistors and methods of manufacturing the same may include a gate on a substrate, a channel layer having a three-dimensional (3D) channel region covering at least a portion of a gate, a source electrode over a first region of the channel layer, and a drain electrode over a second region of the channel layer.

Transistors and methods of manufacturing the same

Graphene transferring members, graphene transferrer, methods of transferring graphene, and methods of fabricating a graphene device, may include a metal thin-film layer pattern and a graphene layer sequentially stacked on an adhesive member. The metal thin-film layer and the graphene layer may have the same shape. After transferring the graphene layer onto a transfer-target substrate during the fabrication of a graphene device, the metal thin-film layer is patterned to form electrodes on respective ends of the graphene layer by removing a portion of the metal thin-film layer.

Graphene-transferring member, graphene transferrer, method of transferring graphene, and methods of fabricating graphene device by using the same

Graphene transferring methods, a device manufacturing method using the same, and substrate structures including graphene, include forming a catalyst layer on a first substrate, forming a graphene layer on the catalyst layer, forming a protection metal layer on the graphene layer, attaching a supporter to the protection metal layer, separating the first substrate from the catalyst layer such that the protection metal layer, the graphene layer, and the catalyst layer remain on the supporter, removing the catalyst layer from the supporter, and transferring the protection metal layer and the graphene layer from the supporter to a second substrate.

Graphene transferring methods, device manufacturing method using the same, and substrate structures including graphene

A graphene electronic device includes: a first conductive layer and a semiconductor layer on a first region of an intermediate layer; a second conductive layer on a second region of the intermediate layer; a graphene layer on the intermediate layer, the semiconductor layer, and the second conductive layer; and a first gate structure and a second gate structure on the graphene layer.

Graphene electronic devices and methods of manufacturing the same

A method of transferring graphene includes forming a sacrificial layer and a graphene layer sequentially on a first substrate, bonding the graphene layer to a target layer, and removing the sacrificial layer using a laser and separating the first substrate from the graphene layer.

Methods of transferring graphene and manufacturing device using the same

A piezoelectric microspeaker and a method of fabricating the same are provided. The piezoelectric microspeaker includes a substrate having a through hole therein; a diaphragm disposed on the substrate and covering the through hole; and a plurality of piezoelectric actuators including a piezoelectric member, a first electrode, and a second electrode, wherein the first and second electrodes are configured to induce an electric field in the piezoelectric member. The piezoelectric actuators include a central actuator, which is disposed on a central portion of the diaphragm and a plurality of edge actuators, which are disposed a predetermined distance apart from the central actuator and are formed on a plurality of edge portions of the diaphragm.

Piezoelectric microspeaker and method of fabricating the same

Transistors, and methods of manufacturing the transistors, include graphene and a material converted from graphene. The transistor may include a channel layer including graphene and a gate insulating layer including a material converted from graphene. The material converted from the graphene may be fluorinated graphene. The channel layer may include a patterned graphene region. The patterned graphene region may be defined by a region converted from graphene. A gate of the transistor may include graphene.

A nanogap device includes a first insulation layer having a nanopore formed therein, a first nanogap electrode which may be formed on the first insulation layer and may be divided into two parts with a nanogap interposed between the two parts, the nanogap facing the nanopore, a second insulation layer formed on the first nanogap electrode, a first graphene layer formed on the second insulation layer, a first semiconductor layer formed on the first graphene layer, a first drain electrode formed on the first semiconductor layer, and a first source electrode formed on the first graphene layer such as to be apart from the first semiconductor layer.

A method of manufacturing a graphene device may include forming a device portion including a graphene layer on the first substrate; attaching a second substrate on the device portion of the first substrate; and removing the first substrate. The removing of the first substrate may include etching a sacrificial layer between the first substrate and the graphene layer. After removing the first substrate, a third substrate may be attached on the device portion. After attaching the third substrate, the second substrate may be removed.

Graphene device and method of manufacturing the same

The method of manufacturing a graphene device includes forming an insulating material layer on a substrate, forming first and second metal pads on the insulating material layer spaced apart from each other, forming a graphene layer having a portion defined as an active area between the first and second metal pads on the insulating material layer, forming third and fourth metal pads on the graphene layer spaced apart from each other with the active area therebetween, the third and fourth metal pads extending above the first metal pad and the second metal pad, respectively, forming a first protection layer to cover all the first and second metal pads, the graphene layer, and the third and fourth metal pads, and etching an entire surface of the first protection layer until only a residual layer made of a material for forming the first protection layer remains on the active area.

Graphene device and method of fabricating the same

A graphene device manufacturing apparatus includes an electrode, a graphene structure including a metal catalyst layer formed on a substrate, a protection layer, and a graphene layer between the protection layer and the metal catalyst layer, a power unit configured to apply a voltage between the electrode and the metal catalyst layer, and an electrolyte in which the graphene structure is at least partially submerged.

Graphene device manufacturing apparatus and graphene device manufacturing method using the apparatus

Growing community of inventors

Hwaseong-si, South Korea

Joo-ho Lee