Samsung Electronics Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Joo Ho Jung

Ju Youn Kim

Bong Seok Suh

Sung Moon Lee

Hyung Joo Na

Sang Min Yoo

Eui Chul Hwang

Yong Ho Baek

Young Sik Hur

Eui Chui Hwang

Jun Sik Hwang

Jung Chul Gong

Jung Hyun Cho

Moon Hee Yi

Yoo Rim Cha

A semiconductor device includes a first active pattern extending lengthwise along a first direction and a second active pattern extending lengthwise along the first direction and spaced apart from the first active pattern in the first direction. The device also includes a field insulating film between the first active pattern and the second active pattern. An upper surface of the field insulating film is lower than or coplanar with upper surfaces of the first and second active patterns. The device further includes an element isolation structure in an isolation trench in the first active pattern and the field insulating film. An upper surface of the element isolation structure is higher than the upper surfaces of the first and second active patterns.

Semiconductor device and method for fabricating the same

A semiconductor device and a method for fabricating the same, the device including an active pattern extending in a first direction on a substrate; a field insulating film surrounding a part of the active pattern; a first gate structure extending in a second direction on the active pattern and the field insulating film, a second gate structure spaced apart from the first gate structure and extending in the second direction on the active pattern and the field insulating film; and a first device isolation film between the first and second gate structure, wherein a side wall of the first gate structure facing the first device isolation film includes an inclined surface having an acute angle with respect to an upper surface of the active pattern, and a lowermost surface of the first device isolation film is lower than or substantially coplanar with an uppermost surface of the field insulating film.

Method for fabricating a semiconductor device including a gate structure with an inclined side wall

Semiconductor device including gate structure having device isolation film

A semiconductor package includes a core member having a cavity penetrating through first and second surfaces, a semiconductor chip disposed in the cavity and having an active surface having connection, a passive component module disposed in the cavity, including a plurality of passive components and a resin portion encapsulating the plurality of passive components, and having a mounting surface from which connection terminals of the passive components are exposed, a connection member on the second surface and including a redistribution layer connected to the connection pads of the semiconductor chip and connection terminals of some of the plurality of passive components, connection terminals of the others of the plurality of passive components not being connected to the redistribution layer.

Semiconductor package

A FINFET includes a first fin extending in a first direction on a substrate and, a second fin extending in the first direction and spaced apart from the first fin in the first direction. A third fin is provided with a long side shorter than long sides of the first fin and the second fin and is disposed between the first fin and the second fin. A first gate structure extends in a second direction different from the first direction and crosses the first fin. A device isolation layer is disposed on a lower sidewall of each of the first, second and third fins and is formed to extend in the first direction. An electrically insulating diffusion break region includes a first portion crossing between the first fin and the third fin, a second portion crossing between the second fin and the third fin, and a third portion disposed between the first portion and the second portion on the third fin. The diffusion break region extends in the second direction on the device isolation layer. A level of a lower surface of the third portion is higher than a level of a lower end of each of the first portion and the second portion and is lower than a level of an upper surface of the first gate structure.

FINFETs having electrically insulating diffusion break regions therein and methods of forming same

A fan-out semiconductor package module includes: a structure including a wiring member including wiring patterns, one or more first passive components disposed on the wiring member and electrically connected to the wiring pattern, and a first encapsulant encapsulating at least portions of each of the one or more first passive components, and having a first through-hole penetrating through the wiring member and the first encapsulant; a semiconductor chip disposed in the first through-hole of the structure and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface; a second encapsulant encapsulating at least portions of the semiconductor chip and filling at least portions of the first through-hole; and a connection member disposed on the structure and the active surface of the semiconductor chip and including a redistribution layer electrically connected to the connection pads and the wiring patterns.

Fan-out semiconductor package module

A fan-out semiconductor package includes: a first connection member having a through-hole and having a passive component disposed in the first connection member; a semiconductor chip disposed in the through-hole of the first connection member and having an active surface having connection pads disposed therein and an inactive surface opposing the active surface; an encapsulant encapsulating at least portions of the first connection member and the inactive surface of the semiconductor chip; and a second connection member disposed on the first connection member and the active surface of the semiconductor chip. The first connection member and the second connection member include, respectively, redistribution layers electrically connected to the connection pads of the semiconductor chip, and the passive component is electrically connected to the connection pads of the semiconductor chip through the redistribution layer of the second connection member.

Fan-out semiconductor package including electromagnetic interference shielding layer

Growing community of inventors

Suwon-si, South Korea

Joo Ho Jung