Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Joo-han Kim

Ki-Hun Jeong

Seung-Hwan Shim

Jun-Ho Song

Yu-Gwang Jeong

Sang-Gab Kim

Hong-Kee Chin

Hyung-jun Kim

Yeo-Geon Yoon

Sung-Haeng Cho

Je-Hun Lee

Min-Seok Oh

Joo-Ae Youn

Hee-Joon Kim

Jae-Hong Kim

Chang-Oh Jeong

Jeong-Min Park

Tae-Yoon Kim

Seung-Ha Choi

Shin-Il Choi

Beom-Seok Cho

Min-goo Kim

Min-Sik Jung

Ji-Young Park

Joo-Hyun Do

Dong-Ju Yang

Chang-Hoon Kim

Jung-Suk Bang

Doo-Hee Jung

Yun-Jong Yeo

Joo Seok Yeom

Ki-Yeup Lee

Hyoung Cheol Lee

Hyuk Soon Kwon

Ki-Yong Song

Jee-Hun Lim

Tae-Kyung Yim

Jae-Hak Lee

Kyung-Su Mun

Hwa-Dong Jung

Jeong-Ju Park

Se-Myung Kwon

So-Young Koo

Jung-hwa Bae

Sung-Hen Cho

Wan-Soon Lim

Jae-Jin Lyu

Jun-Young Lee

Sung-Hoon Yang

Baek-Kyun Jeon

Jong-Hyun Choung

Shi-Yul Kim

Sung-wook Kang

Chae-Man Lim

Cheol-Gon Lee

Myung-Koo Hur

Suk-Won Jung

Kyung-Sook Jeon

Sang-Youn Han

Woong-Kwon Kim

Sung-Hwan Hong

Sung-Kyu Hong

Dae-Cheol Kim

Sang-Gun Choi

Kun-Wook Han

Won-jae Lee

Byeong-Hoon Cho

Mi-Seon Seo

Chai-Man Lim

Seung-Mi Seo

Dong-Kwon Kim

Bong-Kyu Shin

Hui-Sung Lee

A method of controlling transmission power used for wireless transmission in a wireless communication device including calculating a remaining power level of a third period based on a tolerant power level of a first period and a remaining power level of a second period, the third period included in the first period and being a period from a current time to a point in time following the current time, the second period being a period from the current time to a point in time preceding the current time, calculating a transmission power level of the third period based on a target power level and the remaining power level of the third period, and generating a power control signal for determining a power level of a transmission signal unit based on the transmission power level of the third period may be provided.

Wireless communication device for controlling transmission power based on remaining power level in preceding time period

Methods of controlling transmission power level based on remaining power level in immediately preceding time period

A contact portion of wiring and a method of manufacturing the same are disclosed. A contact portion of wiring according to an embodiment includes: a substrate; a conductive layer disposed on the substrate; an interlayer insulating layer disposed on the conductive layer and having a contact hole; a metal layer disposed on the conductive layer and filling the contact hole; and a transparent electrode disposed on the interlayer insulating layer and connected to the metal layer, wherein the interlayer insulating layer includes a lower insulating layer and an upper insulating layer disposed on the lower insulating layer, the lower insulating layer is undercut at the contact hole, and the metal layer fills in the portion where the lower insulating layer is undercut.

Contact portion of wire and manufacturing method thereof

Exemplary embodiments of the invention disclose a method of manufacturing a thin film transistor array panel having reduced overall processing time and providing a uniform crystallization. Exemplary embodiments of the invention also disclose a crystallization method of a thin film transistor, including forming on a substrate a semiconductor layer including a first pixel area, a second pixel area, and a third pixel area. The crystallization method includes crystallizing a portion of the semiconductor layer corresponding to a channel region of a thin film transistor using a micro lens array.

Crystallization method of thin film transistor, thin film transistor array panel and manufacturing method for thin film transistor array panel

An apparatus for iteratively estimating a channel in a receiver of a wireless communication system is provided. The apparatus includes a channel estimator configured to estimate a first channel value by using a pilot symbol included in a received signal, a demodulator configured to demodulate the received signal by using the first channel value, a decoding unit configured to decode the received signal demodulated by the demodulator, a feedback determining unit configured to determine whether to iteratively estimate the channel, and a feedback device configured to feed back an input value of the decoding unit when the feedback determining unit determines to iteratively estimate the channel, wherein when the feedback determining unit determines to iteratively estimate the channel, the channel estimator estimates a second channel value by using at least one of the pilot symbol included in the received signal and a data symbol received from the feedback device.

Apparatus and method for estimating channel in wireless communication system

A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.

Thin film transistor having semiconductor with different crystallinities and manufacturing method thereof

A thin film transistor and a method of manufacturing the same are provided. The thin film transistor includes a first gate electrode and an active layer including a crystalline oxide semiconductor which is insulated from the first gate electrode by a first insulating layer and the active layer is arranged to overlap the first gate electrode. A source electrode is formed including at least a portion overlaps the active layer, and a drain electrode is arranged being spaced apart from the source electrode and at least a portion of the drain electrode overlaps the active layer, wherein the source electrode and the drain electrode are insulated from the first gate electrode by the first insulating layer.

Thin film transistor, and method of manufacturing the same

A method and an apparatus for feeding back channel information in a wireless communication system are provided. The method includes calculating an average Signal to Interference and Noise Ratio (SINR), determining a Modulation and Coding Scheme (MCS) level corresponding to the average SINR, determining an MCS level meeting a predefined condition among MCS levels equal to or less than the determined MCS level, and reporting a channel quality indicator representing the determined MCS level to a base station.

Method for and apparatus for feeding back channel information in wireless communication system

An information detection device includes: a plurality of light sensing units each configured to detect light; a plurality of sensor scanning drivers each configured to apply sensor scanning signals to the light sensing units; a sensing signal processor configured to receive position information detected by the light sensing units; a plurality of bias applying units each configured to apply bias voltages to the light sensing units; wherein each bias applying unit applies a different polarity of bias voltage.

Information detection display

A method of manufacturing a thin film transistor array substrate includes: forming a gate pattern on a substrate; forming a first gate insulating film and a second gate insulating film on the substrate; forming a source/drain pattern and a semiconductor pattern on the substrate; forming a passivation film on the substrate; forming a photo-resist pattern on the passivation film; patterning the passivation film using the photo-resist pattern to form a passivation film pattern, the patterning of the passivation film including over-etching the passivation film to form an open region in the passivation film; forming a transparent electrode film on the substrate; removing the photo-resist pattern and a portion of the transparent electrode film on the photo-resist pattern; and forming a pixel electrode on the first gate insulating layer.

Thin film transistor array and method of manufacturing the same

A thin-film transistor array panel and a manufacturing method thereof are provided for one or more embodiments. The thin-film transistor array panel may include: a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode; a source electrode and a drain electrode formed on the gate insulating layer; and a flatness layer formed on the source electrode and the drain electrode, wherein the drain electrode has a higher height than the flatness layer.

Thin-film transistor array panel and method of fabricating the same

A display device and a manufacturing method thereof, include a first thin film transistor including a first control electrode, a first semiconductor disposed on the first control electrode, and a first input electrode and a first output electrode opposite to each other on the first semiconductor; and a second thin film transistor including a second control electrode, a second semiconductor disposed on the second control electrode, and a second input electrode and a second output electrode opposite to each other on the second semiconductor, wherein the first semiconductor includes a first lower semiconductor including polysilicon, and a first upper semiconductor disposed on the first lower semiconductor, the first upper semiconductor including amorphous silicon.

Thin film transistor, display device including the same, and method for manufacturing the same

Growing community of inventors

Yongin-si, South Korea

Joo-han Kim