Samsung Electronics Co., Ltd.

Puresphere Co., Ltd.

Global Standard Technology Co., Ltd.

Jongyong Bae

Suji Gim

Seoyoung Maeng

Youngseok Roh

Jungjoon Pyeon

Sung Chul Yoon

Donghoon Han

Young Seok Roh

Dong Keun Jeon

Minjoon Kim

Sunwoo Yook

Heesub Kim

Hee Ock Park

Sunsoo Lee

Jinkyoung Joo

Byounghoon Ji

Youngduk Ko

Jihnkoo Lee

Jongha Hwang

Kyuho Lee

Jiho Uh

Hongtaek Lim

Iljun Jeon

A scrubber system may include a scrubber housing including a vertically extended cleaning space, an inflow chamber coupled to a bottom portion of the scrubber housing, and first and second inflow portions, each of which is configured to supply a gas into the inflow chamber. The inflow chamber may include a mixing space, and the mixing space may be connected to the cleaning space. The first inflow portion may include a first connection pipe coupled to the inflow chamber to provide a first connection path and the second inflow portion may include a second connection pipe coupled to the inflow chamber to provide a second connection path. The first and second connection paths may be extended toward the mixing space in opposite directions, respectively, and may be connected to opposite portions of the mixing space, respectively.

Scrubber system and wet cleaning method using the same

An exhaust gas processing system including a process chamber in which an exhaust gas is produced; an exhaust gas measurer receiving the exhaust gas and measuring a concentration of the exhaust gas; a solid producing gas processor receiving the exhaust gas and removing a solid producing gas contained in the exhaust gas; a gas supply supplying dilution and cooling gases to the solid producing gas processor; a processed gas measurer receiving, as a processed gas, the exhaust gas free of the solid producing gas and measuring a temperature of the processed gas and ingredients of the processed gas; and a controller receiving results of measurement of the concentration of the exhaust gas from the exhaust gas measurer and results of measurement of the temperature of the processed gas and the ingredients of the processed gas from the exhaust gas measurer and controlling the gas supply based on the measurement results.

Exhaust gas processing system including adsorbent for suppressing powder-like byproduct

An apparatus for collecting a by-product, includes: a chamber provided with a gas inlet and a gas outlet and having an internal space; a heater disposed on the gas inlet side of the internal space within the chamber and varying a heating temperature in time series; a vortex forming member disposed around the heater; a plurality of first collecting members disposed below the heater; a second collecting member disposed below the first collecting member so that a plurality of second collecting members intersect each other; and a third collecting member disposed on the gas outlet side of the internal space within the chamber.

Apparatus for collecting by-product and method for collecting by-product

An apparatus and method for treating a semiconductor process gas comprises a gas inlet allowing a treatment target gas (or gas to be treated) to flow therethrough; a catalytic reaction portion including a catalyst and configured to allow the treatment target gas to be brought into contact with the catalyst; a space velocity controller between the gas inlet and the catalytic reaction portion, the space velocity controller extending from the gas inlet in a diagonal direction in relation to the gas inlet; a differential pressure buffer portion between the space velocity controller and the catalytic reaction portion and including a filter; and a gas outlet configured to externally discharge a product formed as the treatment target gas comes into contact with the catalyst.

Apparatus for treating semiconductor process gas and method of treating semiconductor process gas

A vacuum chuck includes a pedestal including a first surface on which a substrate may be mounted. The first surface of the substrate may include a vacuum hole to provide a vacuum pressure below the substrate, a vacuum groove connected to the vacuum hole, and a gas hole surrounding the vacuum groove to transmit a bottom gas to the substrate. A vacuum pipe may be provided to connect to the vacuum hole, and a gas pipe may be provided to connect to the gas hole. The diameter of the vacuum hole may be about 2 to about 3 micrometers, and a width of the vacuum groove may be about 1.6 to about 2.5 micrometers.

Vacuum chuck, substrate processing apparatus including the same and related method of manufacture

A gas supply for a layer deposition apparatus including a plurality of charge distribution lines connected to a first gas supply source and a plurality of gas filling tanks respectively connected to the charge distribution lines is disclosed. Each of the gas filling tanks may be pressurized with a first gas from the first gas supply source, and a gas supply line connected to a second gas supply source. The apparatus may include a multi-dosing valve assembly connected to outlet portions of the gas filling tanks and configured to supply, sequentially, the first gas from the gas filling tanks to a process chamber. The multi-dosing valve assembly may include a flow path block having a main supply line connected to the process chamber and a backflow prevention valve block fastened to the flow path block and having an opening/closing valve therein.

Gas supply and layer deposition apparatus including the same

Growing community of inventors

Hwaseong-si, South Korea

Jongyong Bae