Invensense, Inc.

Other

Jongwoo Shin

Jong Il Shin

Martin Lim

Joseph Seeger

Peter Smeys

Logeeswaran Veerayah Jayaraman

Houri Johari-Galle

Daesung Lee

Bongsang Kim

Michael Julian Daneman

Matthew Julian Thompson

Vadim M Tsinker

Kegang Huang

Sarah Nitzan

David deKoninck

Varun Subramaniam Kumar

Le Jin

Cerina Zhang

Jeff Chunchieh Huang

Ardalan Heshmati

Karthik Katingari

Fang Liu

Kirt Williams

Stephen Lloyd

Dongyang Kang

Vamshi Gangumalla

Sheena F Shi

Kuolung (Dino) Lei

Joe Seeger

Jong Ii Shin

Zhongzheng Liu

Ren Wang

Kirt Reed Williams

Wencheng Xu

A method for calibrating a micro-electro-mechanical system (MEMS) gyroscopes by determining a plurality of variates including quadrature and inphase values from output data of a first subset of the MEMS gyroscopes, determining offset temperature coefficients of the first subset of the MEMS gyroscopes over temperature variation, computing a linear regression using the quadrature and inphase values and the offset temperature coefficients to determine linear regression variate coefficients for predicting the offset temperature coefficient based on the quadrature and inphase values. The method also including determining a plurality of variates including quadrature and inphase values from output data of a second subset of the MEMS gyroscopes, determining a predicted offset temperature coefficient based on the quadrature and inphase values and the linear regression variate coefficients, and programing the second subset of the MEMS gyroscopes to use the predicted offset temperature coefficient to adjust the output data during operation.

Multi-variate gyroscope offset temperature coefficient compensation

Systems and methods are provided that provide a getter in a micromechanical system. In some embodiments, a microelectromechanical system (MEMS) is bonded to a substrate. The MEMS and the substrate have a first cavity and a second cavity therebetween. A first getter is provided on the substrate in the first cavity and integrated with an electrode. A second getter is provided in the first cavity over a passivation layer on the substrate. In some embodiments, the first cavity is a gyroscope cavity, and the second cavity is an accelerometer cavity.

Systems and methods for providing getters in microelectromechanical systems

An exemplary microelectromechanical device includes a MEMS layer, portions of which respond to an external force in order to measure the external force. A substrate layer is located below the MEMS layer and an anchor couples the substrate layer and MEMS layer to each other. A plurality of temperature sensors are located within the substrate layer to identify a temperature gradient being experienced by the MEMS device. Compensation is performed or operations of the MEMS device are modified based on temperature gradient.

Systems and methods for operating a mems device based on sensed temperature gradients

Described herein are methods and systems for configuring a motion sensor assembly to compensate for a temperature gradient. First and second sensors of the same type are arranged as opposing pairs with respect to a first axis that may be defined by a temperature gradient caused by at least one thermal element. Combining the output measurements of the first sensor and the second sensor allows effects of the temperature gradient on sensor measurements of the first sensor and the second sensor to be compensated.

Method and system for sensor configuration

Systems and methods for operating a MEMS device based on sensed temperature gradients

A microelectromechanical (MEMS) accelerometer has a proof mass and a fixed electrode. The fixed electrode is located relative to the proof mass such that a capacitance formed by the fixed electrode and the proof mass changes in response to a linear acceleration along a sense axis of the accelerometer. The MEMS accelerometer is exposed to heat sources that produce a z-axis thermal gradient in MEMS accelerometer and an in-plane thermal gradient in the X-Y plane of the MEMS accelerometer. The z-axis thermal gradient is sensed with a plurality of thermistors located relative to anchoring regions of a CMOS layer of the MEMS accelerometer. The configuration of the thermistors within the CMOS layer measures the z-axis thermal gradient while rejecting other lateral thermal gradients. Compensation is performed at the accelerometer based on the z-axis thermal gradient.

Vertical thermal gradient compensation in a z-axis MEMS accelerometer

A device comprising a micro-electro-mechanical system (MEMS) substrate with protrusions of different heights that has been integrated with a complementary metal-oxide-semiconductor (CMOS) substrate is presented herein. The MEMS substrate comprises defined protrusions of respective distinct heights from a surface of the MEMS substrate, and the MEMS substrate is bonded to the CMOS substrate. In an aspect, the defined protrusions can be formed from the MEMS substrate. In another aspect, the defined protrusions can be deposited on, or attached to, the MEMS substrate. In yet another aspect, the MEMS substrate comprises monocrystalline silicon and/or polysilicon. In yet even another aspect, the defined protrusions comprise respective electrodes of sensors of the device.

Device comprising a micro-electro-mechanical system substrate with protrusions of different heights that has been integrated with a complementary metal-oxide-semiconductor substrate

A method includes depositing a silicon layer over a first oxide layer that overlays a first silicon substrate. The method further includes depositing a second oxide layer over the silicon layer to form a composite substrate. The composite substrate is bonded to a second silicon substrate to form a micro-electro-mechanical system (MEMS) substrate. Holes within the second silicon substrate are formed by reaching the second oxide layer of the composite substrate. The method further includes removing a portion of the second oxide layer through the holes to release MEMS features. The MEMS substrate may be bonded to a CMOS substrate.

Proof mass and polysilicon electrode integrated thereon

An integrated MEMS device comprises two substrates where the first and second substrates are coupled together and have two enclosures there between. One of the first and second substrates includes an outgassing source layer and an outgassing barrier layer to adjust pressure within the two enclosures. The method includes depositing and patterning an outgassing source layer and a first outgassing barrier layer on the substrate, resulting in two cross-sections. In one of the two cross-sections a top surface of the outgassing source layer is not covered by the outgassing barrier layer and in the other of the two cross-sections the outgassing source layer is encapsulated in the outgassing barrier layer. The method also includes depositing conformally a second outgassing barrier layer and etching the second outgassing barrier layer such that a spacer of the second outgassing barrier layer is left on sidewalls of the outgassing source layer.

CMOS-MEMS integrated device including multiple cavities at different controlled pressures and methods of manufacture

Provided herein is a method including bonding a first oxide layer on a handle substrate to a second oxide layer on a complementary metal oxide semiconductor ('CMOS'), wherein the fusion bonding forms a unified oxide layer including a diaphragm overlying a cavity on the CMOS. The handle substrate is removed leaving the unified oxide layer. A piezoelectric film stack is deposited over the unified oxide layer. Vias are formed in the piezoelectric film stack and the unified oxide layer. An electrical contact layer is deposited, wherein the electrical contact layer electrically connects the piezoelectric film stack to an electrode on the CMOS.

Integration of AIN ultrasonic transducer on a CMOS substrate using fusion bonding process

A MEMS device is disclosed. The MEMS device includes a first substrate. At least one structure is formed within the first substrate. The first substrate includes at least one first conductive pad thereon. The MEMS device also includes a second substrate. The second substrate includes a passivation layer. The passivation layer includes a plurality of layers. A top layer of the plurality of layers comprises an outgassing barrier layer. At least one second conductive pad and at least one electrode are coupled to the top layer. At least one first conductive pad is coupled to the at least one second conductive pad.

MEMS-CMOS device that minimizes outgassing and methods of manufacture

A method and system for forming a MEMS device are disclosed. In a first aspect, the method comprises providing a conductive material over at least a portion of a top metal layer of a base substrate, patterning the conductive material and the at least a portion of the top metal layer, and bonding the conductive material with a device layer of a MEMS substrate via metal silicide formation. In a second aspect, the MEMS device comprises a MEMS substrate, wherein the MEMS substrate includes a handle layer, a device layer, and an insulating layer in between. The MEMS device further comprises a base substrate, wherein the base substrate includes a top metal layer and a conductive material over at least a portion of the top metal layer, wherein the conductive material is bonded with the device layer via metal silicide formation.

CMOS-MEMS integration using metal silicide formation

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Pleasanton, CA, United States of America

Jongwoo Shin