First Solar, Inc.

General Electric Company

Jongwoo Choi

Joseph John Shiang

William Hullinger Huber

Yong Liang

Holly Ann Blaydes

Kristian William Andreini

Eugene Thomas Hinners

Adam Fraser Halverson

Rick C Powell

Aharon Yakimov

Jinbo Cao

A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

Photovoltaic devices and method of making

Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

A photovoltaic device includes an electron blocking layer (EBL) and an absorber layer. The EBL is positioned between the absorber layer and a back contact layer. A material of the EBL is a cadmium zinc telluride CdZnTe, and a material of the absorber layer is a cadmium telluride selenide CdTeSeproducing a lattice mismatch between the materials of the EBL and between the materials of the absorber of less than about two tenths of a percent when x˜y and has a value less than about 0.4.

Photovoltaic devices and methods of forming the same

Described herein are photon counting devices comprising direct mode detectors with improved signal to noise ratios which are suitable for use in X-ray imaging devices, and other imaging devices.

Metal oxide interface passivation for photon counting devices

A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes selenium, and an atomic concentration of selenium varies non-linearly across a thickness of the absorber layer. A method of making a photovoltaic device is also presented.

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Niskayuna, NY, United States of America

Jongwoo Choi