Samsung Electronics Co., Ltd.

Jongwan Choi

Myoungbum Lee

Bo-Young Lee

Won-Seok Jung

Jongmyeong Lee

Jiwoon Im

Kyung-Tae Jang

Tae-Jong Han

Kwangchul Park

Byungho Chun

Jiyoun Seo

A method for fabricating a semiconductor device includes forming a stacked structure on a substrate, forming a first interlayer dielectric covering the stacked structure, and forming a second interlayer dielectric covering the first interlayer dielectric. The stacked structure includes a stepwise shape. The first interlayer dielectric includes at least one step portion having a slope surface connecting a first top surface to a second top surface. The first top surface and the sloped surface define a first angle that is an obtuse angle. A level of the second top surface is higher than a level of the first top surface.

Method for fabricating semiconductor device including a first ILD with sloped surface on a stacked structure and a second ILD on the first ILD

A semiconductor device includes a plurality of gate structures on a substrate, the plurality of gate structures including a gate metal pattern and delimiting air gaps formed therebetween, an insulating layer on the plurality of gate structures, and a porous insulating layer between the plurality of gate structures and the insulating layer, the porous insulating layer configured to cross the plurality of gate structures to delimit the air gaps.

Semiconductor devices and methods of fabricating the same

Semiconductor devices, and methods of fabricating the same, include forming a trench between a plurality of patterns on a substrate to be adjacent to each other, forming a first sacrificial layer in the trench, forming a first porous insulation layer having a plurality of pores on the plurality of patterns and on the first sacrificial layer, and removing the first sacrificial layer through the plurality of pores of the first porous insulation layer to form a first air gap between the plurality of patterns and under the first porous insulation layer.

Semiconductor devices having carbon-contained porous insulation over gate stack structures

Methods of fabricating semiconductor devices having air gaps in dielectric layers

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Suwon-si, South Korea

Jongwan Choi