Lg Display Co., Ltd.

Industry-University Cooperation Foundation Hanyang University

Yonsei University

Jonguk Bae

Juheyuck Baeck

Seungmin Lee

Kyung Tea Park

Dohyung Lee

Saeroonter Oh

YongHo Jang

JunHyeon Bae

Taeuk Park

PilSang Yun

Kyoseop Choo

Kyung Sang Park

Jiyong Noh

Kwanghwan Ji

Jin Seong Park

Bokyoung Cho

Jangyeon Kwon

Ki Lim Han

Kyung Chul Ock

Junhyeon Bae

A thin-film transistor according to an exemplary embodiment of the present invention comprises an active layer; an intermediate layer; a gate insulating film; a gate electrode; an interlayer insulating film; and source and drain electrodes. The active layer is positioned on a substrate, and the gate insulating film is positioned on the active layer. The gate electrode is positioned on the gate insulating film, and the interlayer insulating film is positioned on the gate electrode. The source and drain electrodes are positioned on the interlayer insulating film and connected to the active layer. The intermediate layer is positioned between the active layer and the gate insulating film, and made of an oxide semiconductor comprising a Group IV element.

Thin-film transistor array substrate

Disclosed are a thin film transistor, a method of manufacturing the same, and an organic light emitting display device including the same, in which a driving stability of a driving transistor is enhanced even without connecting a source electrode to a bottom gate electrode of the driving transistor. The film transistor includes a N-type semiconductor layer, a P-type semiconductor layer on the N-type semiconductor layer, a first gate electrode on the P-type semiconductor layer, a gate insulation layer between the first gate electrode and the P-type semiconductor layer, a first source electrode connected to a first side of the P-type semiconductor layer, and a first drain electrode connected to a second side of the P-type semiconductor layer.

Thin film transistor, method of manufacturing the same, and organic light emitting display device including the same

Disclosed is a thin film transistor substrate that may include a base substrate, a first protection film disposed on the base substrate, an oxide semiconductor layer disposed on the first protection film, a gate electrode insulated from the oxide semiconductor layer and partially overlapped with at least one portion of the oxide semiconductor layer, a source electrode connected with the oxide semiconductor layer, and a drain electrode provided at a predetermined interval from the source electrode and connected with the oxide semiconductor layer, wherein the oxide semiconductor layer has a hydrogen content of 2.4 at % (atomic % or atom %)&#x2dc;2.6 at %.

Thin film transistor substrate and display device

Disclosed are an oxide thin film transistor (TFT), a method of manufacturing the same, and a display panel and a display device using the same, in which a first conductor and a second conductor are provided at end portions of a semiconductor layer formed of oxide semiconductor. The first conductor and second conductor are electrically connected to a first electrode and a second electrode, and covered by a gate insulation layer. The oxide TFT includes a semiconductor layer provided on a buffer and including an oxide semiconductor, a gate insulation layer covering the semiconductor layer and the buffer, a gate electrode provided on the gate insulation layer to overlap a portion of the semiconductor layer, and a passivation layer covering the gate and the gate insulation layer.

Coplanar type oxide thin film transistor, method of manufacturing the same, and display panel and display device using the same

Disclosed is a thin film transistor including both an N-type semiconductor layer and a P-type semiconductor layer, a method for manufacturing the same, and a display device including the same, wherein the thin film transistor may include a first gate electrode on a substrate; a first gate insulating film covering the first gate electrode; a semiconductor layer on the first gate insulating film; a second gate insulating film covering the semiconductor layer; and a second gate electrode on the second gate insulating film, wherein the semiconductor layer includes the N-type semiconductor layer and the P-type semiconductor layer.

Thin film transistor, method for manufacturing the same, and display device including the same

The present disclosure relates to an oxide thin film transistor and a fabricating method thereof. In the oxide thin film transistor, which uses amorphous zinc oxide (ZnO) semiconductor as an active layer, damage to the oxide semiconductor due to dry etching may be minimized by forming source and drain electrodes in a multilayered structure having at least two layers, and improving stability and reliability of a device by employing a dual passivation layer structure, which includes a lower layer for overcoming an oxygen deficiency and an upper layer to minimize effects of an external environment on the multilayered source and drain electrodes.

Oxide thin film transistor and method of fabricating the same

a thin-film transistor according to an exemplary embodiment of the present invention comprises an active layer; an intermediate layer; a gate insulating film; a gate electrode; an interlayer insulating film; and source and drain electrodes. The active layer is positioned on a substrate, and the gate insulating film is positioned on the active layer. The gate electrode is positioned on the gate insulating film, and the interlayer insulating film is positioned on the gate electrode. The source and drain electrodes are positioned on the interlayer insulating film and connected to the active layer. The intermediate layer is positioned between the active layer and the gate insulating film, and made of an oxide semiconductor comprising a Group IV element.

The present disclosure relates to a thin film transistor substrate having a high reliability oxide semiconductor material including a metal oxide semiconductor material. A thin film transistor substrate includes a substrate, a gate electrode disposed on the substrate, a semiconductor layer including an oxide semiconductor material combining one or more of indium, gallium and zinc, oxygen, and a doping material. The doping material may be a group 15 or 16 gaseous element. The semiconductor layer has a channel area overlapping with the gate electrode with a gate insulating layer, a source area extended from one side of the channel area, and a drain area extended from another side of the channel area, a source electrode connected to the source area, and a drain electrode connected to the drain area.

Thin film transistor substrate having high reliability metal oxide semiconductor material

Discussed is a display device, that may include a substrate divided into a display area and a non-display area except the display area, a first light shielding film formed in the display area, a second light shielding film formed in the non-display area, and oxide thin film transistors and organic light emitting diodes, which are formed on the first light shielding film, wherein the first light shielding film and the second light shielding film are spaced apart from each other.

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Seoul, South Korea

Jonguk Bae