Samsung Electronics Co., Ltd.

Jongsun Jung

Jae-Won Kim

Woon-Ki Lee

Junyeong An

Sangwoo Pyo

Dongyoun Yi

Chul-Joong Park

Shivashanker Reddy Kesireddy

Ki-Bum Chun

A semiconductor device includes first power supply lines arranged in a first direction and extended in a second direction, second power supply lines arranged in the second direction and extended in the first direction, power gating switches, and taps, Each of the power gating switches is connected with one of the first power supply lines and at least two of the second power supply lines. Each of the taps is connected with one of the first power supply lines or one of the second power supply lines. One of the power gating switches closest to a first power gating switch is a second power gating switch, one of the taps closest to the first power gating switch is a first tap, and at least one of the second power gating switch and the first tap is spaced from the first power gating switch in a third direction.

Semiconductor device including power gating switches

A semiconductor device includes a semiconductor substrate, an integrated device ort the semiconductor substrate, a first redistribution layer on the semiconductor substrate, the first redistribution layer having first conductive patterns electrically connected to the integrated device, a second redistribution layer on the first redistribution layer, the second redistribution layer having second conductive patterns connected to the first conductive patterns, and third conductive patterns on a top surface of the second redistribution layer. The third conductive patterns include pads connected to the second conductive patterns, under-bump pads spaced apart from the pads, a grouping pattern between the pads and an outer edge of the second redistribution layer, and wiring lines that connect the under-bump pads to the pads and connect the pads to the grouping pattern.

Semiconductor device

Growing community of inventors

Seongnam-si, South Korea

Jongsun Jung