Hyundai Motor Company

Kia Motors Corporation

JongSeok Lee

Dae Hwan Chun

Youngkyun Jung

Junghee Park

NackYong Joo

Hyun Woo Noh

A manufacturing method of a semiconductor device is provided. The method includes sequentially forming an n&#x2212; type of layer, a p type of region, and an n+ type of region on a first surface of a substrate, forming a preliminary trench in the n&#x2212; type of layer by a first etching process and forming a preliminary gate insulating layer by a first thermal oxidation process. The method includes etching the lower surface of the preliminary trench and the preliminary second portion to form a trench by a second etching process and forming a gate insulating layer in the trench by a second thermal oxidation process. The gate insulating layer includes a first and second portion. The preliminary first portion is thicker than the preliminary second portion and the first portion. The first portion thickness is equal to the thickness of the second portion.

Manufacturing method of semiconductor device to uniformly form thickness of gate insulating layer

A Schottky barrier diode includes: an n+ type of silicon carbide substrate; an n&#x2212; type of epitaxial layer formed on a first surface of the n+ type of silicon carbide substrate; a plurality of p+ regions formed inside the n&#x2212; type of epitaxial layer; a Schottky electrode formed in an upper portion of the n&#x2212; type of epitaxial layer of an electrode region; and an ohmic electrode formed on a second surface of the n+ type of silicon carbide substrate, wherein the plurality of p+ regions are formed to be spaced apart from each other at a predetermined interval within the n&#x2212; type of epitaxial layer.

Schottky barrier diode and method for manufacturing the same

A method for manufacturing a semiconductor device includes: forming sequentially an n&#x2212; type epitaxial layer and an n+ type area on a first surface of an n+ type silicon carbide substrate; forming a plurality of first trenches and a plurality of second trenches by etching the n&#x2212; type epitaxial layer and the n+ type area using a first mask pattern as a mask after forming the first mask pattern on the n+ type area; forming a groove by etching the first mask pattern using a first photosensitive film pattern as a mask after forming the first photosensitive film pattern in the plurality of first trenches; forming a p type area by injecting p ions in the plurality of second trenches using the first mask pattern with the groove as the mask after removing the first photosensitive film pattern; forming a gate insulating layer in the plurality of first trenches after removing the first mask pattern with the groove; forming a gate electrode on the gate insulating layer; forming a passivation layer on the gate electrode; forming a source electrode in the plurality of second trenches; and forming a drain electrode on a second surface which is an opposite side to the first surface of the n+ type silicon carbide substrate.

Growing community of inventors

Gyeonggi-do, South Korea

JongSeok Lee