Micron Technology Incorporated

Jongpyo Kim

Byung Yoon Kim

Hyucksoo Yang

Apparatus and methods are disclosed, including memory devices and systems. Example memory devices, systems and methods include an array of memory cells and a transistor located on a periphery of the array of memory cells. A number of data lines are shown coupled to memory cells in the array, wherein the number of data lines extend over a first metal gate of a transistor in the periphery of the array, where the number of data lines are formed from a second metal, and form a direct interface with the first metal gate.

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Boise, ID, United States of America

Jongpyo Kim