Skc Co., Ltd.

Senic Inc.

Samsung Display Co., Ltd.

Sk Pucore Co., Ltd.

Jongmin Shim

Junghwan Shin

Jong Hwi Park

Jung Woo Choi

Jung-Gyu Kim

Kap-Ryeol Ku

Sang Ki Ko

Byung Kyu Jang

Jung Hwan Myung

Seung Mo Hong

Hyuk Hee Han

Myung-Ok Kyun

Eun Su Yang

Hyeon Myeong Seo

Minyoung Park

Yeon Sik Lee

Kihyun Pyun

Jang Won Seo

Kyunho Kim

Junpyo Lee

Min-soo Choi

Jang-Mi Lee

Taegon Kim

Sang Mook Kim

Seunghwan Moon

Il Hwan Yoo

Myung Ok Kyun

Myoungseop Song

Jooyoung Jung

Seong Hwan Lee

Yong Sang La

Hyoseok Yun

Byeong Uk Ahn

Jung Gyu Kim

Kap Ryeol Ku

Seung Bae Oh

JooYoung Jung

Yu Jeong Song

Junghyun An

Example embodiments relate to a method of measurement, an apparatus for measurement, and an ingot growing system that measure properties relating an induction heating characteristic of a graphite article. The method of measurement comprises an arranging step of arranging a graphite article to the coil comprising a winded conducting wire; and a measuring step of applying power for measurement to the coil through means of measurement connected electronically to the coil, and measuring electromagnetic properties induced in the coil. The method of measurement and the like measure electromagnetic properties of graphite articles like an ingot growing container, and an insulating material, and provide data required for selecting so that further enhanced reproducibility for growth of an ingot can be secured.

Method of measuring a graphite article, apparatus for a measurement, and ingot growing system

The embodiments relate to an electrochromic device having flexibility while achieving an excellent light transmission variable function based on the electrochromic principle. The electrochromic device comprises a light transmission variable structure interposed between a first base layer and a second base layer, wherein the light transmission variable structure comprises a first chromic layer and a second chromic layer, and the value of &#x394;TTdas defined in Equation (1) is 3% or less.

Flexible electrochromic device

A circuit board assembly includes a main board and a connection board attached to the main board. The connection board includes a base board including a connecting pad area and a mounting area, wherein the connection board is attached to the main board in the connecting pad area, and wherein the mounting area is spaced apart from the connecting pad area in a first direction and includes a driving chip mounted thereon. The connection board further includes first connection pads disposed on the connecting pad area of the base board, and second connection pads disposed on the connecting pad area of the base board. The main board includes first main pads connected to the first connection pads in a one-to-one connection and a second main pad connected to the second connection pads in a many-to-one connection.

Circuit board assembly and display device including the same

A method for preparing a SiC ingot includes: preparing a reactor by disposing a raw material in a crucible body and disposing a SiC seed in a crucible cover, and then wrapping the crucible body with a heat insulating material having a density of 0.14 to 0.28 g/cc; and growing the SiC ingot from the SiC seed by placing the reactor in a reaction chamber and adjusting an inside of the reactor to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the SiC seed.

Method for preparing SiC ingot, method for preparing SiC wafer and the SiC wafer prepared therefrom

Embodiments relate to a polythiourethane-based plastic lens. When a polythiourethane-based plastic lens is polymerized according to the embodiment, the types, contents, and the like of the polythiol compounds and the isocyanate compounds are adjusted to control the storage moduli at room temperature and high temperatures, their variations, the energy attenuation (KEL) obtained therefrom, and the glass transition temperature, whereby the polythiourethane-based plastic lens thus obtained is enhanced in impact resistance and thermal resistance.

Polythiourethane-based plastic lens

A wafer having relaxation moduli different by 450 GPa or less, as determined by dynamic mechanical analysis, when loaded to 1 N and 18 N with a loading rate of 0.1 N/min at a temperature of 25&#xb0; C.

Silicon carbide ingot, wafer, method for producing a silicon carbide ingot, and method for manufacturing a wafer

A method for preparing a SiC ingot includes: disposing a raw material and a SiC seed crystal facing each other in a reactor having an internal space; subliming the raw material by controlling a temperature, a pressure, and an atmosphere of the internal space; growing the SiC ingot on the seed crystal; and collecting the SiC ingot after cooling the reactor. The wafer prepared from the ingot, which is prepared from the method, generates cracks when an impact is applied to a surface of the wafer, the impact is applied by an external impact source having mechanical energy, and a minimum value of the mechanical energy is 0.194 J to 0.475 J per unit area (cm).

Method for preparing silicon carbide wafer and silicon carbide wafer

A SiC ingot includes: a main body including a first cross-sectional plane of the main body and a second cross-sectional plane of the main body facing the first cross-sectional plane; and a protrusion disposed on the second cross-sectional plane and including a convex surface from the second cross-sectional plane of the main body, wherein a first end point disposed at one end of the second cross sectional plane, a second end point disposed at another end of the second cross sectional plane, and a peak point disposed on the convex surface are disposed on a third cross-sectional plane of the main body perpendicular to the first cross-sectional plane, and wherein a radius of curvature of an arc corresponding to a line of intersection between the third cross-sectional plane and the convex surface satisfies Equation 1 below:3&#x2264;37&#x2003;&#x2003;[Equation 1]where r is the radius of curvature of the arc corresponding to the line of intersection between the third cross-sectional plane and the convex surface, and D is a length of a line of intersection between the first cross-sectional plane and the third cross-sectional plane.

Silicon carbide ingot, method of preparing the same, and method for preparing silicon carbide wafer

An adhesive layer of seed crystal includes a graphitized adhesive layer, wherein the graphitized adhesive layer is prepared by heat-treating a pre-carbonized adhesive layer, and wherein the adhesive layer has Vr value of 28%/mmor more, and the Vr value is represented by Equation 1 below:  

Adhesive layer of seed crystal, method for preparing a laminate using the same, and method for preparing a wafer

A method for preparing a SiC ingot includes preparing a crucible assembly comprising a crucible body having an internal space, loading a raw material into the internal space of the crucible body and placing a plurality of SiC seed in the internal space of the crucible body at regular intervals spaced apart from the raw material, and growing the SiC ingot from the plurality of SiC seed by adjusting the internal space of the crucible body to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the plurality of SiC seed. A density of the crucible body may be 1.70 to 1.92 g/cm.

Method for preparing a SiC ingot and device for preparing a SiC ingot wherein electrical resistance of crucible body is 2.9 ohms or more

The wafer having a retardation distribution measured with a light having a wavelength of 520 nm, wherein an average value of the retardation is 38 nm or less, wherein the wafer comprises a micropipe, and wherein a density of the micropipe is 1.5/cmor less, is disclosed.

Wafer and method of manufactruring wafer

An embodiment relates to an aromatic polythiol compound for optical materials, and the aromatic polythiol compound according to the embodiment contains a phenyl group and a large number of sulfur atoms in its polythiol structure so that a polymerizable composition and an optical material obtained therefrom have excellent optical properties such as high refractive index and low specific gravity, as well as excellent mechanical properties such as low cure shrinkage; thus, they can be advantageously used for producing various plastic optical lenses such as eyeglass lenses and camera lenses.

Aromatic polythiol compound for optical material

Embodiments relate to a polymerizable composition comprising a phosphorus-based mold releasing agent for an optical use whose preparation process is improved, and a process for preparing the phosphorus-based mold releasing agent. The phosphorus-based mold releasing agents can be prepared more easily and conveniently by using phosphorous pentoxide, which can easily react with a monoalcohol and/or water at room temperature in the absence of a catalyst or a solvent. In addition, byproducts are not generated during the reaction. Thus, when a lens is produced by using the mold release agent obtained therefrom, it is possible to prevent a defective appearance of the lens that may be caused by byproducts, thereby further enhancing the appearance properties thereof. Further, since separate steps for removing byproducts, specifically, such steps as washing and filtration, are not required, wastewater is not generated. Thus, it is not only environmentally friendly, but the production cost can also be reduced as the process is simple.

Phosphorus-based releasing agent, optical polymerizable composition comprising same and preparation thereof

In the method and the apparatus for releasing a molded article from a mold according to the embodiments, the lateral of the molded article in the mold is pressed, so that it is possible to minimize the damage of the mold and the molded article at the time of the release, while the amount of a mold release agent used is minimized.

Method and apparatus for releasing molded article from mold

A connector assembly and a display device are provided. A connector assembly includes a first connector comprising a long-side portion at which a plurality of signal terminals is located and a short-side portion at which a power source voltage terminal is located, and a printed circuit board including a plurality of signal printed lines connected to the plurality of signal terminals and a power source voltage printed line connected to the power source voltage terminal, the first connector being arranged on the printed circuit board.

Growing community of inventors

Hwaseong-si, South Korea

Jongmin Shim