Samsung Display Co., Ltd.

Jongjun Baek

Jaewoo Jeong

Byungsoo So

Hiroshi Okumura

Byung Soo So

Jongoh Seo

Dong-Sung Lee

Hyungue Kim

Tae Hoon Yang

Jong Chan Lee

Woong Hee Jeong

Dongmin Lee

Ji-Hwan Kim

Yoonho Khang

Jonghoon Choi

Janghyun Kim

Kibum Kim

Jihwan Kim

Minkyung Kang

Provided are a thin-film transistor substrate, a manufacturing method thereof, and a display apparatus. The thin-film transistor substrate includes: a substrate; a buffer layer on the substrate; a semiconductor layer arranged on the buffer layer and including a first conductive area, a second conductive area, and a channel area between the first conductive area and the second conductive area; a first dopant doped in an upper portion of the channel area at a first concentration; a second dopant doped in a lower portion of the channel area at a second concentration and being of a different type from a type of the first dopant; a gate insulating layer covering the semiconductor layer; and a gate electrode overlapping the channel area in a plan view and disposed on the gate insulating layer.

Thin-film transistor substrate, manufacturing method thereof, and display apparatus employing the thin-film transistor substrate

Provided are a thin film transistor capable of minimizing the level of a leakage current and a display apparatus including the same. The thin film transistor includes a buffer layer disposed over a substrate, and a semiconductor layer disposed over the buffer layer, wherein the semiconductor layer includes a first area doped with a first conductivity type and disposed adjacent to an upper surface of the semiconductor layer, a second area spaced apart from the first area, doped with the first conductivity type, and disposed adjacent to the upper surface of the semiconductor layer, a third area doped with a second conductivity type different from the first conductivity type and disposed under the first area, and a fourth area doped with the second conductivity type and disposed under the second area.

Thin film transistor and display apparatus including the same

A laser irradiation apparatus includes a laser light source which emits a laser beam, a first lens through which the laser beam emitted from the laser light source passes, a first scanner which reflects the laser beam passing through the first lens and changes a direction of the laser beam, a second scanner which reflects the laser beam deflected by the first scanner and changes a direction of the laser beam, a plurality of second lenses through which the laser beam deflected by the second scanner passes, where at least one of the plurality of second lenses is configured to vibrate in one direction, and an optical element through which the laser beam passing through the plurality of second lenses passes, where the optical element is configured to correct an incident angle of the laser beam incident a substrate.

Laser irradiation apparatus and laser irradiation method

A laser irradiation method includes a first scanning wherein a laser beam is scanned in a first region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using a spot laser beam, and a second scanning wherein laser beam is scanned in a second region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using the spot laser beam. A center of the second region is spaced apart from a center of the first region in the X direction.

Laser irradiation method and laser irradiation apparatus

A display apparatus includes a substrate, a first thin film transistor on the substrate, the first thin film transistor including an active layer including a source region, a drain region, and a channel region between the source region and the drain region, and a display device on the substrate and electrically connected to the first thin film transistor. The source region, the drain region, and the channel region include a first dopant and a second dopant, the second dopant being different from the first dopant. A concentration of the first dopant in the channel region is less than a concentration of the first dopant in the source region and the drain region.

Display apparatus and method of manufacturing the same

A method of manufacturing a display apparatus includes forming a first substrate on a support substrate; forming a first barrier layer on the first substrate; and forming a conductive layer by implanting n-type impurities or p-type impurities in the first barrier layer and at least a portion of the first substrate. A display apparatus includes a conductive layer arranged on a substrate and a barrier layer arranged on the conductive layer. The conductive layer is doped with n-type impurities when the first barrier layer is doped with n-type impurities, and the conductive layer is doped with p-type impurities when the first barrier layer is doped with p-type impurities.

Display apparatus with doped barrier and conductive layers and method of manufacturing the same

A display panel includes: a base substrate; a circuit layer on the base substrate; and a display element layer on the circuit layer, wherein the circuit layer includes an active layer on the base substrate and containing boron and fluorine; a control electrode on the active layer; and a control electrode insulation layer between the active layer and the control electrode, wherein the active layer includes: a core layer in which a concentration of the boron is greater than a concentration of the fluorine; and a surface layer on the core layer and in which a concentration of the fluorine is greater than a concentration of the boron.

Method for manufacturing display panel by providing laser light to doped preliminary active layer to form active layer

A display device may include a substrate, a buffer layer on the substrate, a first active pattern on the buffer layer, the first active pattern having a first thickness, a second active pattern on the buffer layer spaced from the first active pattern and having a second thickness smaller than the first thickness, a first gate insulating layer on the first active pattern and the second active pattern, a first gate electrode on the first gate insulating layer, the first gate electrode overlapping the first active pattern, and a second gate electrode on the first gate insulating layer, the second gate electrode overlapping the second active pattern.

Display device and method of manufacturing the same

Provided are a laser annealing apparatus and a method of manufacturing a substrate having a poly-Si layer using the laser annealing apparatus. The laser annealing apparatus includes a laser beam source that emits a linearly polarized laser beam, a polygon mirror that rotates around a rotation axis and reflects the laser beam emitted from the laser beam source, a first Kerr cell disposed on a laser beam path between the laser beam source and the polygon mirror, and a first optical element that directs the laser beam reflected by the polygon mirror toward an amorphous Si layer where the laser beam is irradiated upon the amorphous Si layer.

Laser annealing apparatus and method of manufacturing substrate having poly-si layer using the same

Display panel having active layer with a surface layer in which F concentration is greater than a core layer

A method of manufacturing a backplane for a display device includes forming an insulation layer on a substrate, forming a pad electrode layer on the insulation layer, forming a photoresist pattern on the pad electrode layer in the pad region, etching the pad electrode layer and a portion of the insulation layer by the photoresist pattern as an etch-stop layer so as to simultaneously form a pad electrode and a side protection layer, the side protection layer covering a sidewall of the pad electrode, and stripping the photoresist pattern.

Backplane for display device and method of manufacturing the same

A display apparatus includes a base substrate, an active pattern on the base substrate including a source region, a drain region, and a channel region that is doped between the source region and the drain region, the channel region including polycrystalline silicon, and a gate electrode overlapping the channel region of the active pattern. The channel region may include a lower portion, an upper portion, and an intermediate portion between the upper portion and the lower portion, and a dopant density of the lower portion may be 80% or more of a dopant density of the upper portion.

An organic light emitting display device includes a semiconductor element, a lower electrode, a light emitting layer, an upper electrode, an anti-reflection layer, and a thin film encapsulation structure. The semiconductor element is disposed on a substrate. The lower electrode is disposed on the semiconductor element. The light emitting layer is disposed on the lower electrode. The upper electrode is disposed on the light emitting layer. The anti-reflection layer is disposed on the upper electrode. The thin film encapsulation structure is disposed on the anti-reflection layer.

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Seoul, South Korea

Jongjun Baek