Samsung Electronics Co., Ltd.

Jongju Park

Sanguk Park

SeongSue Kim

Hakseung Han

Raewon Yi

Donggun Lee

Sanghyun Kim

Chalykh Roman

Jongkeun Oh

Sang Hyun Kim

Mun Ja Kim

Byunggook Kim

Yongwoo Kim

Jaehyuck Choi

Youngchang Seo

Gyeongcheon Jo

A correcting apparatus of an extreme ultraviolet (EUV) photomask includes: a support portion configured to support an EUV photomask having a main area in which a plurality of pattern elements are arranged, a chemical supply unit configured to supply a chemical to the main area, a light source unit configured to generate a laser beam, and a control unit configured to irradiate the laser beam to the chemical supplied to the main area of the EUV photomask and to, based a laser dosage map for correcting critical dimensions (CDs) of the plurality of pattern elements in the main area, adjust a dosage of the laser beam based on the laser dosage map such that among the plurality of pattern elements, pattern elements having different critical dimensions are etched at different etching rates.

Correcting apparatus of extreme ultraviolet (EUV) photomask and correcting method of EUV photomask

A method is provided. The method includes preparing a mask blank, the mask blank including a substrate, a reflective layer disposed on the substrate for reflecting extreme ultraviolet light, and a light absorbing layer disposed on the reflective layer; providing a photomask by forming a plurality of pattern elements having a target critical dimension from the light absorbing layer, wherein the plurality of pattern elements include a correction target pattern element to be corrected, and the correction target pattern element has a critical dimension different from the target critical dimension; identifying a correction target area of the photomask in which the correction target pattern element is disposed; applying an etchant to the photomask; and irradiating a laser beam to the correction target area while the etchant is provided on the photomask.

Method of manufacturing extreme ultraviolet (EUV) photomask and method and apparatus for correcting EUV photomask

A laser annealing method performed on a reflective photomask may include preparing a reflective photomask including a pattern area and a border area surrounding the pattern area and irradiating a laser beam onto the border area of the reflective photomask. The irradiating of the laser beam may include split-irradiating a plurality of laser beam spots onto the border area. Each of the plurality of laser beam spots may be shaped using a beam shaper. The beam shaper may include a blind area, a transparent area at a center of the blind area, and a semitransparent area between the blind area and the transparent area. Each of the plurality of laser beam spots may include a center portion passing through the transparent area and having a uniform energy profile and an edge portion passing through the semitransparent area and having an inclined energy profile.

Method of annealing reflective photomask by using laser

An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.

Apparatus and method for measuring phase of extreme ultraviolet (EUV) mask and method of fabricating EUV mask including the method

Provided is a mask. The mask may include a mask substrate, mask patterns on the mask substrate, frames disposed on an edge of the mask substrate outside the mask patterns, and a pellicle spaced apart from the mask patterns, the pellicle being disposed on the frames, wherein the pellicle includes protection layers each of which has a nanometer thickness.

Mask including pellicle, pellicle repairing apparatus, and substrate manufacturing equipment

A treatment system comprises an energy source that generates a energy beam that is emitted along an energy beam pathway. A beam section shaper is positioned along the energy beam pathway that receives an incident energy beam and modifies a section shape thereof to output a shape-modified energy beam. A beam intensity shaper is positioned along the energy beam pathway that receives an incident energy beam having a first intensity profile and outputs an intensity-modified energy beam having a second intensity profile, wherein the first intensity profile has a relative maximum average intensity at a center region thereof and wherein the second intensity profile has a relative minimum average intensity at a center region thereof.

Beam shapers, annealing systems employing the same, methods of heat treating substrates and methods of fabricating semiconductor devices

A method of manufacturing a photomask includes forming a multi-layer on a substrate and a blank layer on the multi-layer, patterning the blank layer to form openings exposing the multi-layer on a projection region of the substrate, and irradiating at least a portion of the multi-layer exposed by the openings with pulses of light output by a pulse laser whose pulse width is substantially greater than 0.001 seconds. Thus, the photomask has a reflective layer that includes a low-reflectance part corresponding to that part of the multi-layer irradiated by the light output by the pulse laser.

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Hwaseong-si, South Korea

Jongju Park