Fairchild Semiconductor Corporation

Jongjib Kim

Sunglyong Kim

Chris Nassar

Dan Hahn

In one general aspect, an apparatus can include an anode terminal, and a cathode terminal. The apparatus can include a junction field-effect transistor (JFET) portion having a channel disposed within a semiconductor substrate and defining a first portion of an electrical path between the anode terminal and the cathode terminal. The apparatus can also include a diode portion formed within the semiconductor substrate and defining a second portion of the electrical path between the anode terminal and the cathode terminal. The diode portion can be serially coupled to the channel of the JFET device.

Apparatus related to a diode device including a JFET portion

In one general aspect, an apparatus includes a metal or metal silicide contact layer disposed on an n-well region of a semiconductor substrate to form a primary Schottky diode. The apparatus includes a p-well guard ring region of the semiconductor substrate abutting the primary Schottky diode. The metal silicide contact layer has a perimeter portion extending over the p-well guard ring region of the semiconductor substrate and the p-well guard ring region has a doping level establishing a work function difference relative to the perimeter portion of the metal silicide contact layer to form a guard ring Schottky diode. The guard ring Schottky diode is in series with a p-n junction interface of the p-well region and the n-well region and the guard ring Schottky diode has a polarity opposite to that of the primary Schottky diode.

Schottky diode with opposite-polarity schottky diode field guard ring

A semiconductor device can include a transistor and an isolation region. The transistor is formed in a semiconductor substrate having a first conductivity type. The transistor includes a drift region extending from a drain region toward a source region and having a second conductivity type. The drift region includes a first resurf region near a working top surface and having the first conductivity type. The high voltage isolation island region includes a first well region laterally offset from the drift region. The first well region has the second conductivity type. An isolation region is located laterally between the drain region and the first well region. The isolation region comprises a portion of the semiconductor substrate extending to the top working surface.

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Falmouth, ME, United States of America

Jongjib Kim