Yonsei University

Industry-University Cooperation Foundation Hanyang University

Fujitsu Corporation

Skhynix Inc.

Inu Research & Business Foundation

I3system Corp.

Jongill Hong

Saeroonter Oh

Donghyun Kim

Hitoshi Kanai

Kenji Noma

Gunhee Han

Junichi Kane

Taewook Kim

Han Joo Chung

Seunghan Park

Heonjin Choi

Taehui Na

Seongyeol Pyo

Taejin Bae

Sooho Bae

Sung Joon Yoon

Jangyup Son

Disclosed are a spin logic device based on spin-charge conversion and a spin logic array using the same. A reconfigurable spin logic array according to an exemplary embodiment of the present invention may include: an input terminal receiving at least three current signals; a plurality of wires transmitting the current signal in connection with the input terminal and including a horizontal wire and a vertical wire which cross each other; a first gate array in which at least one first majority gate connected to the input terminal through the wires and implemented based on the spin logic device is arranged; and a second gate array in which at least one second majority gate connected to the first gate array through the wires and implemented based on the spin logic device is arranged.

Spin logic device based on spin-charge conversion and spin logic array using the same

A spin logic device includes a first stage unit in which one side of the first magnetic layer is connected to an upper end of a first spin-charge conversion layer, a first dielectric layer is connected to a lower end of the other side of the first magnetic layer, a first conductive channel for receiving input current is connected to a lower end of the first dielectric layer, a first input portion formed of a conductor for receiving a first drive voltage is connected to an upper end of one side of the first magnetic layer, a second conductive channel for outputting first output current is connected to a lower end of the first spin-charge conversion layer, and a first conductor having a ground is connected to a lower end of the second conductive channel. A resistor for outputting steady current as the first output current may be connected between nodes on opposite ends of the second conductive channel.

Spin-charge conversion based spin logic device

Disclosed art a magnetic tunnel junction device, a magnetic memory using the same, and a method for manufacturing the same. The method for manufacturing the magnetic tunnel junction device may include the steps of a lamination step of forming an initial multilayer structure including at least one metallic oxide layer and a metallic layer on a substrate; a heat treatment step of heat-treating the initial multilayer structure; and a device forming step of forming a magnetic tunnel junction device of a final multilayer structure in which at least one metallic oxide layer and the metallic layer are converted to at least one ferromagnetic material layer and the oxide layer by heat treatment.

Magnetic tunnel junction device, magnetic memory using the same and method for manufacturing the same

The present invention relates to a magnetic device including a spin-current pattern generating a spin current perpendicular to a main plane of the spin-current pattern by an in-plane current, and a free magnetic layer disposed in contact with the spin-current pattern and having a perpendicular magnetic anisotropy magnetically switchable by the spin current.

Spin-orbit torque magnetic device

Provided are a multi-layered magnetic thin film stack, a magnetic tunneling junction, and a data storage device. The multi-layered magnetic thin film stack includes a FePd alloy layer including an alloy of iron (Fe) and palladium (Pd); a tunneling barrier layer, which includes MgO and is disposed on the FePd alloy layer; and a Heusler alloy layer disposed between the FePd alloy layer and the tunneling barrier layer, wherein the FePd alloy layer and the Heusler alloy layer constitute a hybrid magnetic layer.

Multi-layered magnetic thin film stack and data storage device having the same

The present invention relates to hydrogen surface-treated graphene, a formation method thereof, and an electronic device including the same. The graphene according to one exemplary embodiment of the present invention can be useful in preparing hydrogen surface-treated graphene having a band gap using simple methods through indirect hydrogen plasma treatment. Also, the graphene according to one exemplary embodiment of the present invention can be useful in forming two regions having different band gaps through the indirect hydrogen plasma treatment, and thus can be useful in reducing the processing time and the processing cost since the graphene is directly applicable to electronic devices such as transistors, and touch panels.

Hydrogen surface-treated graphene, formation method thereof and electronic device comprising the same

Provided is a neural device including at least one nano-wire. The neural device includes a nano-wire formed on a base formed on a first surface of a substrate, and an electrode pad formed on a second surface different from the first surface of the substrate and configured to output an electrical signal gained from a neural fiber through the nano-wire or apply a signal for an electric stimulus to the nano-wire. Therefore, it is possible to prevent the nano-wire from becoming embedded in an encapsulation and maximize a contact between the nano-wire and a nerve.

Neural device having via-hole connection and using at least one nano-wire

A magnetoresistive spin-valve sensor is constructed to include a magnetic layer, a specular layer made of a metal oxide, a back layer made of Au, Cu, AuCu, AgCu, AuAgCu or an alloy thereof and interposed between the magnetic layer and the specular layer, and a metal layer disposed adjacent to the specular layer, opposite to the back layer, and made of a metal which improves GMR performance of the magnetoresistive spin-valve sensor.

Growing community of inventors

Seoul, South Korea

Jongill Hong