Skhynix Inc.

Yonsei University

Jongil Hong

Hongil Yoon

Kangwook Jo

Sachin Pathak

A magnetic memory device includes a magnetic element and a write circuit electrically connected to two nodes of the magnetic element and configured to provide a write current to the magnetic element, wherein the write current includes a first current having a first peak applied for a first time period and a second current having a second peak applied for a second time period, where the second peak is smaller than the first peak and the second period is longer than the first time period.

Magnetic memory device with enhanced write performance and operation method thereof

An operating method of a magnetic memory device may include: a first step of retrieving write data to be written to a plurality of magnetic memory cells sharing a bit line according to a write request, the write data including more of a first type of data than a second type of data; a second step of writing the first type of data simultaneously to all cells of the plurality of magnetic memory cells; and a third step of writing the second type of data to a portion of the plurality of magnetic memory cells, the second type of data being different from the first type of data.

Operating method of a magnetic memory device

A magnetic memory device may include a bit line, a plurality of source lines, a plurality of normal cells coupled between the bit line and the plurality of source lines, and each including a magnetic resistance element and a switching element coupled in series to the magnetic resistance element and switched by a word line signal, a dummy cell coupled to the bit line, and a spin-hall effect material layer between the bit line and the magnetic resistance element. The magnetic resistance element may write data according to a first current that flows through the dummy cell and flows in a direction parallel to the magnetic resistance element, and a second current that flows through the magnetic resistance element.

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Seoul, South Korea

Jongil Hong