Lightwave Microsystems Corporation

Neophotonics Corporation

Jongik Won

Fan Zhong

Liang Zhao

Anthony J Ticknor

Luis Martinez

Hsiang En Tseng

Calvin Ka Kuen Ho

Farnaz Parhami

Nizar S Kheraj

A method of manufacture of an integrated circuit coupling system includes: forming a waveguide assembly, having a top clad over an open end of an optical core; forming a first photoresist having a base photoresist pattern shape with sloped photoresist sidewalls tapered down to expose a portion of the top clad; forming a recess having clad sidewalls from the portion of the top clad exposed by the base photoresist pattern shape, the clad sidewalls having a shape replicating a shape of the base photo resist pattern shape; and forming an optical vertical insertion area, from the clad sidewalls forming the recess, having a pocket trench, a horizontal step, and a mirror with a reflective material selectively applied to a section of the clad sidewalls and exposing the open end opposite to the mirror, the horizontal step between the mirror and the pocket trench.

Integrated circuit coupling system with waveguide circuitry and method of manufacture thereof

This relates to optical devices such as planar light-wave components/circuits which are designed to have a high waveguide pattern density effecting a higher etch selectivity and overall improved dimensional control of the functional waveguides on the optical device.

Methods for etch loading planar lightwave circuits

A method of making an optical waveguide structure having improved thermal isolation and stress reduction. The method etches both deep trenches and shallow trenches in a single step. The method includes the step of depositing a partial top clad layer over a first and second waveguide core. An etch back is then performed on the partial top clad layer to obtain a desired thickness of the partial top clad layer. A first hard mask layer is subsequently deposited over the partial top clad layer. A set of hard masks are then formed over the first and second waveguide cores by patterning and etching the first hard mask layer. A full top clad layer is then deposited over the partial top clad layer and the set hard masks to form a top clad. A second hard mask layer is then deposited over the top clad. A deep trench area and first and second shallow trench areas are then exposed by patterning and etching the second hard mask layer. The deep trench area and the first and second shallow trench areas are then simultaneously etched to form a deep trench extending from the upper surface of the top clad to an underlying substrate, and first and second shallow trenches extending from the upper surface of the top clad to the set of hard masks. The set of hard masks and the second hard mask layer are then removed. Reactive ion etching can be used to etch the first and second hard mask layers. The hard mask layers can be amorphous silicon.

Method for performing a deep trench etch for a planar lightwave circuit

Devices for etch loading planar lightwave circuits

A method of making a polarization insensitive optical waveguide structure. An optical core layer is formed on a substrate, wherein the optical core layer has a higher refractive index than the substrate. A mask is formed over the optical core layer. The unmasked areas of the optical core layer are then over-etched to define the core, wherein the over-etching removes the unmasked area of the optical core layer and a portion of the substrate disposed beneath the unmasked area, and defines the optical core. The mask is subsequently removed from the optical core. A cladding layer is then formed over the optical core and the substrate, the cladding layer having a lower refractive index than the optical core, to form a polarization insensitive optical waveguide structure. The amount of over-etching can be controlled to control an amount of substrate disposed beneath the unmasked area of the optical core layer that is removed. The amount of substrate removed, in turn, controls the polarization sensitivity of the optical waveguide structure. The amount of the portion of the substrate removed during the over-etching can be determined to minimize the polarization dependent wavelength shift and the polarization dependent loss of the optical waveguide structure. The amount of the portion of the substrate removed during the over-etching can be determined in accordance with a blanket stress of the cladding layer. The over-etching can be within a range between 7.5 percent and 30 percent.

Reducing polarization dependent loss caused by polarization dependent wavelength shift using core over-etch for planar lightwave circuit fabrication

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Pleasanton, CA, United States of America

Jongik Won