Electronics and Telecommunications Research Institute

Korea Research Institute of Chemical Technology

Jonghyurk Park

Hyoyoung Lee

Rae-Man Park

Gyeong Sook Bang

Sunglyul Maeng

Sang-Hyeob Kim

Seung Youl Kang

JungHyun Lee

Seung Rim Shin

Kun Jun

Nak-Jin Choi

Heeyoel Baek

Chi-Sun Hwang

Jong-Heon Yang

Chunwon Byun

Joong-Seon Choe

Won Seok Han

Chull Won Ju

Hee-Bum Jung

Jong-Hoi Kim

Duk Jun Kim

Nak Jin Choi

Yong Il Jun

Ja Ryong Koo

Junghyun Lee

Provided is a waveguide photodetector including a semiconductor substrate, a first optical waveguide and a second optical waveguide, which are sequentially laminated on the semiconductor substrate, in which each of the first optical waveguide and the second optical waveguide includes a first portion and a second portion, and the first portion extends from the second portion in a first direction parallel to a top surface of the semiconductor substrate, a refractive index matching layer disposed on the second portion of the second optical waveguide, a clad layer disposed on the refractive index matching layer, and an absorber disposed between the refractive index matching layer and the clad layer. Here, the second optical waveguide has a first conductive-type, the clad layer has a second conductive-type opposite to the first conductive-type, and the refractive index matching layer includes a first semiconductor layer that is an intrinsic semiconductor layer.

Waveguide photodetector

Provided are a display device, a method of fabricating the display device, and a method of fabricating an image sensor device. The method of fabricating the display device includes preparing a substrate including a cell array area and a peripheral circuit area, forming a silicon layer on the peripheral circuit area of the substrate, forming oxide layers on the cell array area and the peripheral circuit area of the substrate, forming gate dielectric layers on the silicon layer and the oxide layers, forming the gate electrodes on the gate dielectric layers, wherein the gate electrodes expose both ends of the silicon layer and both ends of the oxide layers, and injecting dopant into both ends of the silicon layer and both ends of the oxide layers at the same time.

Display device, method of fabricating the same, and method of fabricating image sensor device

Provided are a resonance tunneling device and a method of manufacturing the resonance tunneling device. The resonance tunneling device includes a substrate, a plurality of electrodes disposed on the substrate, and a nanoparticle layer disposed between the electrodes, and doped with an impurity. The nanoparticle layer uses the impurity to exhibit resonance tunneling where a current peak occurs at a target bias voltage applied between the electrodes.

Resonance tunneling devices and methods of manufacturing the same

Provided is a method of manufacturing silicon nanotubes including forming non-catalytic metal islands on a substrate; forming catalyst metal doughnuts to surround the non-catalytic metal islands; and growing silicon nanotubes on the catalyst metal doughnuts. The silicon nanotubes are efficiently grown using the catalyst metal doughnuts.

Method of manufacturing silicon nanotubes using doughnut-shaped catalytic metal layer

Provided is a method of forming a nanocomposite solution, and a nanocomposite photovoltaic device. In the method, a metal oxide nanorod solution is prepared and a nanoparticle solution is prepared. The metal oxide nanorod solution and the nanoparticle solution are mixed to form a nanocomposite solution.

Method of forming nanocomposite solution, and nanocomposite photovoltaic device

A gas sensor includes zinc oxide nano-structures formed on a substrate, a plurality of metal islands coated on a surface of each zinc oxide nano-structure and separated from one another, a first electrode electrically connected to one end of each zinc oxide nano-structure through the substrate, a second electrode electrically connected to the other end of each zinc oxide nano-structure, and a current variation-measuring unit electrically connected to each of the first electrode and the second electrode so as to measure a variation in the amount of current flowing between the first electrode and the second electrode. In order to form the plurality of metal islands on the zinc oxide nano-structures, a solution of metal components of a metal material is coated on the surface of each zinc oxide nano-structure.

Gas sensor having zinc oxide nano-structures and method of fabricating the same

An RF device is provided. The RF device includes a vibratile carbon nanotube having a nanotube natural frequency (f), a negative electrode fixed to a first end of the carbon nanotube, a vibratile tuning electrode having a variable resonance frequency and facing a second end of the carbon nanotube, and a positive electrode electrically connected to a first end of the tuning electrode. A second end of the tuning electrode is adjacent to the second end of the carbon nanotube, and the carbon nanotube vibrates at a carrier frequency according to an external electromagnetic wave having the carrier frequency, and the tuning electrode having variable resonance frequency characteristics amplifies distance variation between the second end of the carbon nanotube and the second end of the tuning electrode to increase an electron emission sensitivity according to field emission.

Radio frequency device comprising a vibratile carbon nanotube and a vibratile tuning electrode

Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a nucleation site. The silicon nanowires can be manufactured using the silicon nanodot thin film disposed in a silicon nitride matrix, as a nucleation site instead of using catalytic metal islands, wherein the silicon nanodot thin film includes the silicon nanodots.

Method of manufacturing silicon nanowires using silicon nanodot thin film

Provided are an electron donor-azo-electron acceptor compound having a thiol-based anchoring group, a method of synthesizing the compound, and a molecular electronic device having a molecular active layer formed of the compound. The compound for forming a molecular electronic device includes an azo compound that has a dinitrothiophene group and an aminobenzene group having thiol derivatives. The compound forms a molecular active layer in the molecular electronic devices. The molecular active layer is self-assembled on an electrode using the thiol derivative in the azo compound as an anchoring group. The molecular active layer in the molecular electronic device forms a switching device switching between an on-state and an off-state in response to a voltage applied to electrodes or a memory device storing a predetermined electric signal in response to a voltage applied to the electrodes.

Compound having thiol anchoring group, method of synthesizing the same, and molecular electronic device having molecular active layer formed using the compound

Provided are a molecular electronic device and a method of fabricating the molecular electronic device. The molecular electronic device includes a substrate, an organic dielectric thin film formed over the substrate, a molecular active layer formed on the organic dielectric thin film and having a charge trap site, and an electrode formed on the molecular active layer. The organic dielectric thin film may be immobilized on the electrode or a Si layer by a self-assembled method. The organic dielectric thin film may include first and second molecular layers bound together through hydrogen bonds. An organic compound may be self-assembled over the substrate to form the organic dielectric thin film. The organic compound may include an M'-R-T structure, where M&#x2032;, R and T represent a thiol or silane derivative, a saturated or unsaturated Cto Chydrocarbon group which is substituted or unsubstituted with fluorine (F), and an amino(&#x2014;NH) or carboxyl (&#x2014;COOH) group, respectively.

Growing community of inventors

Daegu, South Korea

Jonghyurk Park