Asm IP Holding B.v.

Samsung Electronics Co., Ltd.

JongHyun Ahn

SeungHwan Lee

HakYong Kwon

KiKang Kim

SeongRyeong Kim

YoungMin Kim

Bumhan Kim

Sungbae Kim

Jaeyoon Lee

SungBae Kim

SungKyu Kang

Jeongil Kim

HieChul Kim

KyuMin Kim

Jungha Paik

Hoyong Jeong

An electronic device according to an embodiment includes a first random number generator module, a second random number generator module, a buffer memory configured to store random number data, and a processor configured to be operatively connected to the first random number generator module, the second random number generator module, and the buffer memory, wherein the processor is configured to acquire a first random number sequence from the first random number generator module to store the acquired first random number sequence in the buffer memory, generate a third random number sequence obtained by changing the first random number sequence based on a second random number sequence acquired from the second random number generator module, and generate an encryption key based on the third random number sequence. In addition, various other embodiments are possible.

Electronic device to enhance randomness of security module using multiple hardware random number generator and the method thereof

This application relates to a method of filling a gap in a three-dimensional structure over a semiconductor substrate. The method may include depositing a thin film at least on a three-dimensional structure over a substrate using at least one reaction gas activated with a first radio frequency (RF) power having a first frequency, the three dimensional structure comprising a trench and/or hole. The method may also include etching the deposited thin film using at least one etchant activated with a second RF power having a second frequency lower than the first frequency. The method may further include repeating a cycle of the depositing and the etching at least once until the trench and/or hole are filled with the thin film. According to some embodiments, a thin film having substantially free of voids and/or seams can be formed in the three-dimensional structure.

Method for filling a gap in a three-dimensional structure on a semiconductor substrate

A method and apparatus for depositing a material on a surface of a substrate are disclosed. The method can include a treatment step to suppress a rate of material deposition on the surface of the substrate. The method can result in higher-quality deposited material. Additionally or alternatively, the method can be used to fill a recess within the surface of the substrate with reduced or no seam formation.

Cyclical deposition method including treatment step and apparatus for same

Growing community of inventors

Gyeonggi-do, South Korea

JongHyun Ahn