Samsung Electronics Co., Ltd.

Jonghwa Baek

Heeju Shin

Sungsik Park

Boo-Hyun Ham

Jeonghyun Kim

Rankyung Jung

Bumjoon Youn

Ja-Min Koo

Hyunchang Lee

Hyunju Song

Yongkug Bae

A semiconductor device includes a substrate including a key region, a dummy active pattern provided on the key region, a dummy channel pattern provided on the dummy active pattern, the dummy channel pattern including a first plurality of semiconductor patterns spaced apart from each other, an epitaxial pattern connected to the dummy channel pattern, and a first sub-key pattern provided on the dummy channel pattern. The first sub-key pattern encloses a top surface, a bottom surface, and side surfaces of each of the first plurality of semiconductor patterns.

Semiconductor device including key region and key pattern and method of fabricating the same

Provided are a method of forming key patterns and a method of fabricating a semiconductor device using the same. The method of forming key patterns may include forming gate and key patterns on a cell region and a scribe lane region, respectively. Here, the key patterns may be formed to have a large width and a larger pitch than those of the gate patterns.

Method of forming key patterns and method of fabricating a semiconductor device using the same

Growing community of inventors

Yongin-si, South Korea

Jonghwa Baek