Lg Philips Lcd Co., Inc.

Jonghoon Yi

Jaekyun Lee

SangGul Lee

Jaebeom Choi

Yongin Park

Jeonghyun Kim

An inkjet print head includes a nozzle, and an ink pool temporarily holding a printing ink and a first screen. The first screen has at least a convex bar column, the bar column having a plurality of bars arranged in a longitudinal direction of the ink pool and spaced apart from each other. A piezo element pumps the printing ink from the ink pool to the nozzle.

Inkjet print-head and method of manufacturing the same

The present invention discloses a color filter for a liquid crystal display device, which includes: a black matrix formed on a substrate; a photosensitive water-repellent layer, such as benzocyclobutene, correspondingly formed on the black matrix; a color filter layer formed on the substrate in openings within the benzocyclobutene layer; and a transparent conductive electrode formed on the black matrix and the color filter layers.

Color filter and method of manufacturing the same

Inkjet print head and method of manufacturing the same

The present invention relates to a method of crystallizing a silicon film, a thin film transistor, and a fabricating method thereof using the same. More particularly, the present invention relates forming a crystalline silicon film by crystallizing a silicon film using laser energy, and a thin film transistor and a fabricating method thereof using the same. The present invention includes forming a buffer layer on a substrate and forming an amorphous silicon film on the buffer layer wherein the amorphous silicon film includes a first region and second regions connected to both ends of the first region. The buffer layer is etched to a degree by using the amorphous silicon as a mask, wherein a space is formed under the first region and a central part of the second region contacts a remaining portion of the buffer layer. The amorphous silicon film is then crystallized. In another aspect, the present invention includes a method of fabricating a thin film transistor using this method of crystallizing an amorphous silicon film.

Method of crystallizing a silicon film and thin film transistor and fabricating method thereof using the same

The present invention discloses a polycrystalline silicon thin film transistor connected to a gate line and a data line, including a source electrode contacting the data line; a gate electrode contacting the gate line; a drain electrode spaced apart from the source electrode; a polysilicon layer having upper and lower surfaces, the lower surface having a contacting area and a noncontacting area, the polysilicon layer being positioned between and contacting the source and the drain electrodes, and acting as a channel in which electrons flow; and a buffer layer positioned under the polysilicon layer, the buffer layer having a supporting portion, the supporting portion supporting the lower surface of the polysilicon layer through the contact area of the lower surface of the polysilicon layer, thereby forming a space between the buffer layer and the noncontacting area of the lower surface of the polysilicon layer.

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Seoul, South Korea

Jonghoon Yi