Samsung Display Co., Ltd.

Jonghoon Choi

Byung Soo So

Jongoh Seo

Dong-min Lee

Dong-Sung Lee

Ji-Hwan Kim

Yeon Hee Jeon

Ji-hwan Kim

Dongmin Lee

Jongjun Baek

Byungsoo So

Dongsung Lee

Jihwan Kim

Yeonhee Jeon

Byungkyu Son

Seunghyun Jang

A laser irradiation apparatus includes a laser beam generator that generates a first laser beam, a beam expander that expands the first laser beam and outputs the expanded first laser beam as a second laser beam, a beam splitter that splits the second laser beam into third laser beams and outputs the third laser beams, and a beam condenser that condenses the third laser beams and outputs condensed third laser beams. The beam expander includes a first lens having a first focal length and a second lens having a second focal length. The first lens is disposed between the laser beam generator and the second lens, the second lens is disposed between the first lens and the beam splitter, and the laser beam generator is spaced apart from the first lens by the first focal length.

Laser irradiation apparatus

A laser apparatus includes a laser generator configured to generate a first laser beam proceeding along a first direction, and an inversion module configured to convert the first laser beam to a second laser beam proceeding along the first direction, the inversion module including a splitter configured to form a reflected laser beam by partially reflecting the first laser beam, and a transmitted laser beam by partially transmitting the first laser beam, and a prism configured to reflect the reflected laser beam.

Laser apparatus and manufacturing method of display apparatus using the same

A display device may include a thin film transistor disposed on a substrate, and a display element electrically connected to the thin film transistor. The thin film transistor may include an active pattern including polycrystalline silicon, a gate insulation layer disposed on the active pattern, and a gate electrode disposed on the gate insulation layer. An average value of grain sizes of the active pattern may be in a range of about 400 nm to about 800 nm. An RMS value of a surface roughness of the active pattern may be about 4 nm or less. A method of manufacturing a polycrystalline silicon layer may include cleaning an amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam having an energy density of about 440 mJ/cmto about 490 mJ/cm.

Display device including polycrystalline silicon layer, method of manufacturing polycrystalline silicon layer, and method of manufacturing display device

A display device may include a substrate, a buffer layer on the substrate, a first active pattern on the buffer layer, the first active pattern having a first thickness, a second active pattern on the buffer layer spaced from the first active pattern and having a second thickness smaller than the first thickness, a first gate insulating layer on the first active pattern and the second active pattern, a first gate electrode on the first gate insulating layer, the first gate electrode overlapping the first active pattern, and a second gate electrode on the first gate insulating layer, the second gate electrode overlapping the second active pattern.

Display device and method of manufacturing the same

A method of manufacturing a thin film transistor includes: removing an oxide film on a surface of an amorphous silicon layer by performing a surface cleaning; and forming an active layer by performing a heat treatment on the amorphous silicon layer, where the amorphous silicon layer is changed into crystalline silicon by the heat treatment.

Thin film transistor, display apparatus including the same, and manufacturing methods thereof

A laser crystallization system includes a transfer part that transfers a substrate on which an amorphous silicon thin film is deposited into a chamber, a laser irradiation part that irradiates an excimer laser to the substrate for crystallization of the amorphous silicon thin film in the chamber, a stage that supports the substrate in the chamber, a measuring part that measures a light transmittance value of the substrate, and a controller that controls the laser irradiation part to irradiate the excimer laser to the substrate when the light transmittance value is equal to or lower than a reference transmittance value and controls the laser irradiation part not to irradiate the excimer laser to the substrate when the light transmittance value is higher than the reference transmittance value.

Growing community of inventors

Hwaseong-si, South Korea

Jonghoon Choi