Samsung Electronics Co., Ltd.

Jonghoon Baek

Donghyun Kim

Jaehyun Lee

Sejin Park

Jonghan Lee

Sooyeon Jeong

Inhyun Song

Taeyeon Shin

Yeongmin Jeon

Hyungkoo Kang

Juyun Park

A semiconductor device includes an active fin protruding from a substrate; a plurality of channel layers on the active fin and spaced apart from each other in a vertical direction; a gate pattern intersecting the active fin and the plurality of channel layers; and source/drain regions on recessed regions of the active fin on both sides of the gate pattern. The gate pattern includes a gate dielectric layer, inner conductive layers, and a conductive liner. The inner conductive layers are disposed between the plurality of channel layers, and between the active fin and a lowermost channel layer among the plurality of channel layers. The conductive liner has a first thickness on an upper surface of an uppermost channel layer in the vertical direction, and at least one of the inner conductive layers have a second thickness in the vertical direction. The first thickness is less than the second thickness.

Semiconductor device

A semiconductor device may include: a dummy gate structure including a first gate pattern in which dummy gate lines extending in one direction are connected to each other on a substrate, and a second gate pattern in which dummy gate lines extending in the one direction are connected to each other on the same line with the first gate pattern; and a third gate pattern extending in parallel with the dummy gate structure on one side of the dummy gate structure.

Semiconductor device including dummy gate patterns and manufacturing method thereof

Growing community of inventors

Ansan-si, South Korea

Jonghoon Baek