Applied Materials, Inc.

Asml Netherlands B.v.

Jonghoon Baek

Soonam Park

Xinglong Chen

David Robert Evans

Saurabh Garg

Jang-Gyoo Yang

Mathew Cheeran Abraham

Jack Michael Gazza

Dmitry Lubomirsky

Edward P Hammond

John M White

Nitin K Ingle

Anchuan Wang

Shankar Venkataraman

He Ren

Robin L Tiner

Suhail Anwar

Beom Soo Park

Gaku Furuta

Jozef Kudela

Chunguang Xia

Sam Hyungsam Kim

Andrew David LaForge

Yue Ma

Deniz Van Heijnsbergen

Jun Ma

Juan Carlos Rocha-Alvarez

Deenesh Padhi

Jeonghoon Oh

Kallol Bera

Amit Kumar Bansal

Tza-Jing Gung

Tsutomu Tanaka

Xinhai Han

Nina Vladimirovna Dziomkina

Satoru Kobayashi

Edwin C Suarez

Daemian Raj Benjamin Raj

Masaki Ogata

Shailendra Srivastava

Nikhil Sudhindrarao Jorapur

John Tom Stewart, Iv

Xiaopu Li

Wenjiao Wang

Sai Susmita Addepalli

Gregory Eugene Chichkanoff

Kristopher R Enslow

John Tom Stewart

Zakaria Ibrahimi

In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.

Cleaning a structure surface in an EUV chamber

The present disclosure relates to a method and apparatus for controlling a plasma sheath near a substrate edge. Changing the voltage/current distribution across the inner electrode and the outer electrode with in the substrate assembly facilitates the spatial distribution of the plasma across the substrate. The method includes providing a first radio frequency power to a central electrode embedded in a substrate support assembly, providing a second radio frequency power to an annular electrode embedded in the substrate support assembly at a location different than the central electrode, wherein the annular electrode circumferentially surrounds the central electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.

Electrostatic chuck with multiple radio frequency meshes to control plasma uniformity

Embodiments described herein relate to apparatus and techniques for radio frequency (RF) phase control in a process chamber. A process volume is defined in the process chamber by a faceplate electrode and a support pedestal. A grounding bowl is disposed within the process chamber about the support pedestal opposite the process volume. The grounding bowl substantially fills a volume other than the process volume below the support pedestal. A phase tuner circuit is coupled to an RF mesh disposed in the support pedestal and the faceplate electrode. The tuner circuit adjusts a phase difference between a phase of the faceplate electrode and a phase of the RF mesh.

Device and method for tuning plasma distribution using phase control

An apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes are provided. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.

Film stack overlay improvement

A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.

System, method and apparatus for target material debris cleaning of EUV vessel and EUV collector

Embodiments of the present disclosure generally relate to an apparatus and method for reducing particle generation in a processing chamber. In one embodiment, an apparatus for processing a substrate is disclosed. The apparatus includes a chamber body, a lid assembly disposed above the chamber body, the lid assembly comprising a top electrode and a bottom electrode positioned substantially parallel to the top electrode, a gas distribution plate disposed between a substrate processing region and the lid assembly, and a substrate support disposed within the chamber body, the substrate support supporting having a substrate supporting surface, wherein the top electrode is in electrical communication with a radio frequency (RF) power supply and a DC bias modulation configuration, and the DC bias modulation configuration is configured to operate the top electrode at a constant zero DC bias voltage during a process.

Particle generation suppresor by DC bias modulation

Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated through the positioning of a plurality of insulation members. The one or more power supplies may be electrically coupled with the process chamber with the use of switching mechanisms. The switches may be switchable to electrically couple the one or more power supplies to the components of the process chamber.

Semiconductor processing with DC assisted RF power for improved control

Methods for reducing particle generation in a processing chamber are disclosed. The methods generally include generating a plasma between a first electrode and a second electrode of the processing chamber by applying a radio frequency (RF) power to the first electrode during an etch process, wherein the first electrode is disposed above the second electrode, and the second electrode is disposed above and opposing a substrate support having a substrate supporting surface, and applying a constant zero DC bias voltage to the first electrode during the process.

Embodiments of the present invention generally relate to apparatus for reducing arcing and parasitic plasma in substrate processing chambers. The apparatus generally include a processing chamber having a substrate support, a backing plate, and a showerhead disposed therein. A showerhead suspension electrically couples the backing plate to the showerhead. An electrically conductive bracket is coupled to the backing plate and spaced apart from the showerhead. The electrically conductive bracket may include a plate, a lower portion, an upper portion, and a vertical extension. The electrically conductive bracket contacts an electrical isolator.

Anti-arc zero field plate

Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.

Tightly fitted ceramic insulator on large area electrode

Methods for reducing particle generation in a processing chamber are disclosed. The methods generally include generating a plasma between a powered top electrode and a grounded bottom electrode, wherein the top electrode is parallel to the bottom electrode, and applying a constant zero DC bias voltage to the powered top electrode during a film deposition process to minimize the electrical potential difference between the powered top electrode and the plasma and/or the electrical potential difference between the grounded bottom electrode and the plasma.

Particle generation suppressor by DC bias modulation

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San Jose, CA, United States of America

Jonghoon Baek