Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Lg Chem, Ltd

Samsung Sdi Co., Inc.

Samsung Display Co., Ltd.

Sungkyunkwan University

New Power Plasma Co., Ltd.

Eppscore Co., Ltd.

Jongho Park

Wandon Kim

Byounghoon Lee

Heesang Yoon

Hoon Jang

Minho Kim

Dongkoo Han

Hyeonggeun Kim

Keunho Roh

Younggwan Song

Yongkwan Lee

Sangsoo Kim

Junyoung Oh

Sangjin Hyun

Seunghwan Kim

Seung Hwan Kim

Sangik Lee

Woo Hong

Hyungjoon Yu

Jun Young Oh

Musarrat Hasan

Ju-Il Choi

Younghoon Kim

Yongjin Lee

Youngjin Kim

Yongho Cho

Bongjo Sung

Youngjun Park

Jungjoo Kim

Youngkwon Lee

Kiwon Yu

Sunghwa Lee

Kyong Hwan Koh

Kowoon Baek

Joonyoung Shin

Tae-Jin Lee

Joon-Sung Lim

Hyunsoo Kim

Atsushi Fujisaki

Hyunki Kim

Heewon Kim

Kyungsuk Oh

Jaeyeol Song

Gyuho Kang

Hyunggil Baek

Inho Yun

Hyojin Yun

Myounggon Kim

Seungkon Mok

Jung-Hwan Park

Jeonghyuk Yim

Hyangbok Lee

Jihwan Kim

Jeong-Min Park

Un-Byoung Kang

Jongho Lee

Jeongmin Park

Hyoungjoo Lee

Han Soo Kim

Doo-Suk Kang

Mingyu Lee

Hanseok Kim

Seungeun Lee

Junyoung Park

Changkyu Choi

Hwan Shim

Jeonggi Jin

Myungsoo Huh

Hwang Kim

Tae Jin Lee

Jeongwon Han

Unbyoung Kang

Myung Soo Huh

Seunghyun Bang

Jeong Won Han

Weonhong Kim

Seungjin Lee

Hyunsu Hong

Yunjang Jin

Woonseong Baek

Hyeoncheol Jeong

Hakjun Lee

Raisa Kharbash

Gyuseok Han

Hyunseok Shin

Juil Choi

Ji Hyoung Ahn

Jooman Han

Sunhwa Kim

Daewook Kim

Hyejung Seo

Jiwoon Jung

Junga Lee

Seong-Hoon Bae

Changho Cho

Sunghyun Kim

Daewoo Lee

Juho Jung

Whanjin Roh

A display device includes a first substrate; a blue light source on the first substrate; a wavelength converter on the blue light source; and a color filter layer on the wavelength converter, wherein the blue light source includes a quantum dot nanorod light emitting diode configured to emit blue light in a wavelength range of about 400 nm to about 500 nm, and the wavelength converter includes a light emitting material or a fluorescent material, the wavelength converter being configured to convert the blue light emitted from the blue light source into white light.

Display device

An inkjet printing device includes a chamber having an imaginary centerline that divides a length of the chamber in the first direction into two halves, and a plurality of inkjet nozzles coupled to the chamber and receiving ink from the chamber, the inkjet nozzles being arranged in a plurality of columns along a first direction. The inkjet nozzles include a center column nozzle disposed adjacent to the centerline of the chamber and an outer column nozzle disposed farther from the centerline than the center column nozzle. The chamber includes a bump portion disposed farther from the centerline than the outer column nozzle, the bump portion including a bump on an inner surface of the chamber.

Inkjet printing device and method of manufacturing display device using the same

A semiconductor package includes a first semiconductor chip on a base chip, a second semiconductor chip on the first semiconductor chip in a first direction, each of the first and second semiconductor chips including a TSV and being electrically connected to each other via the TSV, dam structures on the base chip and surrounding a periphery of the first semiconductor chip, a first adhesive film between the base chip and the first semiconductor chip, a portion of the first adhesive film filling a space between the first semiconductor chip and the dam structures, a second adhesive film between the first semiconductor chip and the second semiconductor chip, a portion of the second adhesive film overlapping the dam structures in the first direction, and an encapsulant encapsulating a portion of each of the dam structures, the first semiconductor chip, and the second semiconductor chip.

Semiconductor package

A semiconductor device includes a first redistribution substrate, a semiconductor chip on a top surface of the first redistribution substrate, a conductive structure on the top surface of the first redistribution substrate and laterally spaced apart from the semiconductor chip, and a molding layer on the first redistribution substrate and covering a sidewall of the semiconductor chip and a sidewall of the conductive structure. The conductive structure includes a first conductive structure having a first sidewall, and a second conductive structure on a top surface of the first conductive structure and having a second sidewall. The first conductive structure has an undercut at a lower portion of the first sidewall. The second conductive structure has a protrusion at a lower portion of the second sidewall.

Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises a substrate that includes a plurality of vias, a first chip stack on the substrate and including a plurality of first semiconductor chips that are sequentially stacked on the substrate, and a plurality of first non-conductive layers between the substrate and the first chip stack and between neighboring first semiconductor chips. Each of the first non-conductive layers includes first extensions that protrude outwardly from first lateral surfaces of the first semiconductor chips. The more remote the first non-conductive layers are from the substrate, the first extensions protrude a shorter length from the first lateral surfaces of the first semiconductor chips.

Semiconductor package and method of fabricating the same

Disclosed is a cleaning unit comprising a variable brush portion. The cleaning unit according to an embodiment of the present invention comprises a shaft capable of reciprocating along an axial direction, wherein a first cam protrudes from the outer circumferential surface of the shaft. In addition, the brush portion is arranged on the outer circumferential surface of a body member surrounding the shaft, and the brush portion includes a second cam engaged with the first cam. When the shaft is moved in the axial direction, the first cam pushes the second cam in a radial direction, whereby the brush portion may protrude in the radial direction. That is, as the shaft reciprocates in the axial direction, the length of the brush portion protruding from the outer circumferential surface of the body member may vary.

Cleaning unit comprising agitator

A display device includes a display configured to output image data, and a controller configured to extract a contour noise removal region from the image data, acquire motion information of the image data, and remove contour noise based on a de-contour gain value corresponding to the motion information.

The present invention relates to a robotic cleaner comprising: a cleaner body which has a plurality of guide holders provided therein and performs self-driving; and a suction nozzle which receives an agitator therein, has guide protrusions longitudinally protruding from both sidewalls thereof toward the plurality of guide holders and received in the plurality of guide holders, respectively, and is up-and-down movably and back-and-forth swingably mounted to the cleaner body, whereby the driving performance and cleaning performance of the cleaner can be improved.

Robotic cleaner

An inkjet printing apparatus according to an embodiment includes a stage where a target substrate is disposed, and an inkjet head that discharges ink on the target substrate. The inkjet head includes a tank that stores the ink, nozzles that are provided on the tank and discharge the ink, and a damper that is disposed in the tank, and the damper comprises a protruding portion that protrudes toward the nozzles from the damper.

Inkjet printing apparatus

Disclosed is a semiconductor package comprising an interposer substrate having first and second surfaces opposite each other and including a wiring layer adjacent to the first surface, a semiconductor chip on the first surface of the interposer substrate, a passivation layer on the first surface of the interposer substrate and covering the semiconductor chip, and redistribution patterns in the passivation layer and connected to the semiconductor chip. The semiconductor chip has third and fourth surfaces opposite to each other. The third surface of the semiconductor chip faces the first surface of the interposer substrate. The redistribution patterns are connected to the fourth surface of the semiconductor chip. The semiconductor chip includes chip pads adjacent to the third surface and chip through electrodes connected to the chip pads. Each of the chip pads is directly bonded to a corresponding one of wiring patterns in the wiring layer.

A semiconductor package is provided. The semiconductor package includes: a first package substrate; a first semiconductor chip on the first package substrate; an interposer substrate including a lower surface facing the first package substrate, an upper surface opposite to the lower surface, and an upper conductive pad in the upper surface of the interposer substrate; a first dam structure on the upper surface of the interposer substrate and extending along an edge of the upper conductive pad; a first molding layer in contact with the lower and upper surfaces of the interposer substrate and with an outer wall of the first dam structure; and a conductive connector in contact with an inner wall of the at least one first dam structure and with the upper conductive pad.

Interposer and semiconductor package including the same

A semiconductor device includes a plurality of semiconductor patterns that are sequentially stacked and spaced apart from each other on a substrate, and a gate electrode on the plurality of semiconductor patterns. The gate electrode includes a capping pattern and a work function pattern that are sequentially stacked on the plurality of semiconductor patterns. The capping pattern includes a first metal nitride layer including a first metal element, and a second metal nitride layer including a second metal element whose work function is greater than a work function of the first metal element. The first metal nitride layer is disposed between the second metal nitride layer and the plurality of semiconductor patterns. The first metal nitride layer is thinner than the second metal nitride layer.

Semiconductor device

A semiconductor device includes first and second active patterns on first and second active regions of a substrate, respectively, a pair of first source/drain patterns and a first channel pattern therebetween which are in an upper portion of the first active pattern, a pair of second source/drain patterns and a second channel pattern therebetween which are in an upper portion of the second active pattern, and first and second gate electrodes intersecting the first and second channel patterns, respectively. Each of the first and second gate electrodes includes a first metal pattern adjacent to a corresponding one of the first and second channel patterns. The first and second channel patterns include SiGe. A Ge concentration of the second channel pattern is higher than a Ge concentration of the first channel pattern. A thickness of the first metal pattern of the second gate electrode is greater than a thickness of the first metal pattern of the first gate electrode.

According to various embodiments, an electronic device may include: multiple antennas configured to support long-term evolution (LTE) communication and new radio (NR) communication; a memory configured to store association information between first multiple output powers used for the LTE communication and second multiple output powers used for the NR communication corresponding to the first multiple output powers respectively, and at least one processor, wherein the at least one processor is configured to: configure an LTE transmission power to be used for data transmission in a physical uplink shared channel (PUSCH) of the LTE communication, identify a first NR output power maximum value corresponding to the LTE transmission power based on the association information, identify a sounding reference signal (SRS) output power to be used for SRS transmission through at least one of the multiple antennas, and at least temporarily reduce the LTE transmission power based on the SRS output power being greater than the first NR output power maximum value.

Electronic device transmitting reference signal and method for operating thereof

Various embodiments of an electronic device for matching an antenna impedance may include an antenna, a wireless communication module, an impedance matching module, and at least one processor, wherein the at least one processor is configured to: select a first index corresponding to an impedance of the antenna among a plurality of sampled indexes through a first measurement in which a tuning code of the impedance matching module is configured as a reference code; identify a use environment corresponding to the first index; select a second index corresponding to the impedance of the antenna among the plurality of sampled indexes through a second measurement in which the tuning code of the impedance matching module is configured as the reference code and as a ground code corresponding to the use environment; and adjust the impedance of the antenna based on a tuning code corresponding to the second index.

Electronic device for matching antenna impedance and operating method thereof

Growing community of inventors

Seoul, South Korea

Jongho Park