Samsung Electronics Co., Ltd.

Naver Corporation

Jongeun Park

Jisu Jeon

JungChak Ahn

Dae Hwang Kim

Yitae Kim

Donghyuk Park

Seong Hyeon Shin

Seung-bin Kim

Kyungho Lee

Dong Hwan Kim

Heegeun Jeong

Gwideok Ryan Lee

Jeongsoon Kang

Sangjun Choi

Yujung Choi

Seungwon Cha

Dongseok Cho

Dong Woo Suh

Cheolju Kang

Gyunha Park

Inyong Koo

Je Kyun Park

The stacked image sensor includes a first semiconductor substrate and including a photoelectric conversion region and a floating diffusion area, a first insulating layer under the first semiconductor substrate and including a gate of a transfer transistor, a second semiconductor substrate under the first insulating layer and including first impurities of a first conductivity type, and a second insulating layer under the second semiconductor substrate and including a metal pad of a floating diffusion node and a gate of a source follower transistor, wherein the floating diffusion area and the metal pad of the floating diffusion node are electrically connected through a deep contact that is in the first insulating layer and the second semiconductor substrate. The second semiconductor substrate further includes a well region. At least a portion of deep contact may be in the well region. The well region may surround the deep contact.

Stacked image sensors

A method for extracting a fingerprint of a video having a plurality of frames includes obtaining a plurality of pixel value matrices from each of the plurality of frames, calculating maximum values of average pixel values in each axis of the plurality of pixel value matrices for each of the plurality of frames, and calculating the fingerprint of the video based on a temporal correlation of the maximum values calculated for the plurality of frames.

Method and apparatus for extracting a fingerprint of video having a plurality of frames

A method for extracting a fingerprint of a video includes calculating 2D discrete cosine transform (DCT) coefficients from each of the plurality of frames of the video, extracting, from the 2D DCT coefficients, a coefficient having a basis satisfying at least one of up-down symmetry or left-right symmetry, and calculating a fingerprint of the video based on the extracted coefficient.

Method and apparatus for extracting a fingerprint of a video having a plurality of frames

Disclosed are an electronic apparatus for dynamic note matching (DNM) and an operating method thereof, the method including acquiring a first section sequence by reducing a first sequence extracted from an input signal based on at least one first section in which the respective values are successively arranged; acquiring a second section sequence reduced from a pre-stored second sequence based on at least one second section in which the respective values are successively arranged; and calculating a similarity between the first section sequence and the second section sequence.

Electronic apparatus for dynamic note matching and operating method of the same

Disclosed are an electronic apparatus for recognizing a multimedia signal and an operating method of the electronic apparatus, including segmenting a detection signal into a plurality of frames; segmenting each of the frames into a plurality of blocks; and representing each of the blocks as a hash word based on a time feature and a frequency feature for each of the blocks.

Electronic apparatus for recognizing multimedia signal and operating method of the same

An image sensor includes a substrate including an active region defined by a device isolation layer, a photoelectric conversion layer in the substrate, a floating diffusion region in the substrate at an edge of the active region, and a transfer gate on the active region. The transfer gate is in contact with a portion of the device isolation layer adjacent the active region.

Image sensors

An image sensor and a method of fabricating the same are disclosed. The image sensor may include a substrate including an active region defined by a device isolation layer, a photoelectric conversion layer, a well impurity layer, a floating diffusion region, and a transfer gate. When viewed in a plan view, a lower portion of the transfer gate may include a first surface in contact with the device isolation layer, a second surface substantially perpendicular to the first surface, and a third surface connected to the first and second surfaces. The third surface may face the floating diffusion region. A first portion of a gate insulating layer may be adjacent to the third surface and thinner than a portion adjacent to the first surface or the second surface, and this may facilitate more efficient transfer of an electron from the photoelectric conversion layer to the floating diffusion region.

Image sensor

Provided are image sensors and methods of fabricating the same. The image sensor has a transfer gate, which may be configured to include a buried portion having a flat bottom surface and a rounded lower corner. This structure of the buried portion enables to transfer electric charges stored in the photoelectric conversion part effectively.

Image sensors and methods of fabricating the same

Growing community of inventors

Seongnam-si, South Korea

Jongeun Park