Samsung Electronics Co., Ltd.

Jongcheol Shin

Changrok Moon

Byungjun Park

Junemo Koo

Namgil Kim

Sang-Hoon Kim

June-mo Koo

Seung-Hun Shin

An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

Image sensors including conductive pixel separation structures

Image sensors including conductive pixel separation structures and methods of fabricating the same

An image sensor includes a substrate having a first surface opposing a second surface and a plurality of pixel regions. A photoelectric converter is included in each of the pixel regions, and a gate electrode is formed on the photoelectric converter. Also, a pixel isolation region isolates adjacent pixel regions. The pixel isolation region includes a first isolation layer coupled to a channel stop region. The channel stop region may include an impurity-doped region.

Image sensor and method of forming the same

Image sensors are provided. The image sensors may include first and second stacked impurity regions having different conductivity types. The image sensors may also include a floating diffusion region in the first impurity region. The image sensors may further include a transfer gate electrode surrounding the floating diffusion region in the first impurity region. Also, the transfer gate electrode and the floating diffusion region may overlap the second impurity region.

Image sensors including a gate electrode surrounding a floating diffusion region

An image sensor includes a substrate region of a first conductivity type, a photodiode region of a second conductivity type located in the substrate, a hole accumulated device (HAD) region of the first conductivity type located at a surface of the substrate and over the photodiode region, and a transfer gate located over the surface of the substrate adjacent the HAD region. The image sensor further includes a first channel region of the first conductivity type located in the substrate and aligned below the transfer gate, a second channel region of the second conductivity type located in the substrate between said transfer gate and the first channel region, and an floating diffusion region which is located in the substrate and which electrically contacts the second channel region.

Growing community of inventors

Hwaseong-si, South Korea

Jongcheol Shin