Samsung Electronics Co., Ltd.

Lg Electronics Inc.

JongCheol Lee

Jangwoo Lee

Sukjin Chung

Geunkyu Choi

MinHwa Jung

Jaechul Shin

Younsoo Kim

Seung Han Lee

In-Sun Yi

Jin Pil Heo

Chayoung Yoo

Jungil Ahn

A substrate processing system may include a process chamber in which a process on a substrate is performed, a supporting unit in the process chamber to support the substrate, a gas supply unit including a gas supply part with gas supply holes, with the gas supply holes being configured to supply a process gas onto the substrate, and an exhaust unit configured to exhaust the process gas from the process chamber. The gas supply part may include a gas supply region provided with the gas supply holes and a gas diffusion region between the gas supply region and the exhaust unit. The gas diffusion region may be free of the gas supply holes.

Gas supply unit and substrate processing system

A semiconductor device manufacturing apparatus includes a shower head at a top of a chamber, a gas supplying part on the shower head, a susceptor in the chamber, and a gas exhausting part under the chamber. The chamber has first and second reaction spaces that are virtually separated from each other. A first gas supply pipe supplies a first gas into the first reaction space and a second gas supply pipe supplies a second gas into the second reaction space. A first gas exhausting pipe is adjacent the first reaction space and a second gas exhausting pipe is adjacent the second reaction space on opposite sides of the susceptor. A first gas sensor connected to the first gas exhausting pipe senses the second gas and a second gas sensor connected to the second gas exhausting pipe senses the first gas.

Semiconductor device manufacturing apparatus having plurality of gas exhausting pipes and gas sensors

According to example embodiments, a method of forming a layer includes: forming a dielectric layer using a metal precursor expressed by one of RM(NRR)and M(ORR) and using a silicon precursor expressed by HSi(NRR). Each of 'R', 'R', &#x201c;R&#x201d;, &#x201c;R&#x201d;, and &#x201c;R&#x201d; are hydrogen or hydrocarbon; &#x201c;R&#x201d; is different than &#x201c;R&#x201d; and &#x201c;R&#x201d;; &#x201c;x&#x201d; is in the range of 3 to 5; &#x201c;y&#x201d; is in the range of 1 to 4; &#x201c;z&#x201d; is in the range of 2 to 3; and &#x201c;M&#x201d; is a metal. The dielectric layer is a metal silicate layer or a metal nitride layer doped with silicon.

Methods of forming a layer

Growing community of inventors

Seoul, South Korea

JongCheol Lee