Samsung Electro-mechanics Co., Ltd.

Jong Yun Lee

Young Do Kweon

Sung Kwon Wi

Young Seuck Yoo

Jin Gu Kim

Hyung Jin Jeon

Jin Hyuck Yang

Seung Wook Park

Ju Hwan Yang

Kang Heon Hur

Ju Pyo Hong

Jong Hwan Baek

Hee Kon Lee

Sang Moon Lee

Won Chul Sim

Chang Bae Lee

Sung Yi

Geon Se Chang

Ho Jin Yun

Jing Li Yuan

Eun Ha Kim

Yuan Jing Li

A coil component includes coil conductors having a multilayer structure including via pads, and vias connected between the via pads on the respective layers. Portions or overall regions of the via pads on two layers which are adjacent to each other overlap each other, and the vias in two layers which are connected to each other by the via pad formed therebetween are disposed in alternating positions.

Coil component and method of manufacturing the same

Disclosed herein are a method of manufacturing a common mode filter forming a coil electrode by directly patterning metal layers laminated on both surfaces of a core insulating layer while not using a build-up process, and the common mode filter manufactured according to the method.

Common mode filter and method of manufacturing the same

The present invention relates to an inductor. An inductor in accordance with an embodiment of the present invention includes: an insulating layer having a hole; a conductive pattern disposed on both surfaces of the insulating layer and having a structure in which portions disposed on the both surfaces are electrically connected to each other through the hole; and a magnetic layer disposed on the insulating layer to cover the conductive pattern, wherein the conductive pattern has a plating pattern formed by performing a plating process.

Inductor and method for manufacturing the same

Disclosed herein is a common mode filter, including: an external magnetic layer; an insulating layer formed on the external magnetic layer and having coil electrodes therein; a protecting layer formed on the insulating layer; an internal magnetic layer formed inside an opening part formed in one surface of the protecting layer; and external electrode terminals passing through the protecting layer and connected with end portions of the coil electrodes, so that there can be provided a common mode filter having excellent durability, moisture resistance, and heat resistance.

Disclosed herein is a common mode filter including an internal electrode manufactured in a coil electrode form and provided with a simultaneous coil pattern in which two coil electrodes are overlapped with each other in a single layer in a direction in which a coil is wound, wherein a height of a second insulating layer formed on the internal electrode is higher than an interval between the coils. Therefore, a portion at which a parasitic capacitance is generated may be basically blocked, and a self resonant frequency (SRF) may be increased while filtering performance as the common mode filter is maintained.

Thin film type common mode filter

The present invention relates to an electrostatic discharge protection device. The electrostatic discharge protection device in accordance with an embodiment of the present invention includes a substrate, an electrostatic discharge absorbing layer having a plating film formed on the substrate, electrodes disposed on the substrate to be spaced apart from each other by a predetermined interval with the electrostatic discharge absorbing layer interposed therebetween, and an insulating layer for covering the substrate and the electrodes.

Electrostatic discharge protection device and method for manufacturing the same

Disclosed herein are a common mode filter and a method for manufacturing the same. The common mode filter includes a first insulator sheet; a first circuit layer having a first-layered first coil and a first-layered second coil alternately and separately arranged; a second insulator sheet laminated on the first circuit layer; and a second circuit layer having a second-layered first coil and a second-layered second coil alternately and separately arranged, the second-layered first coil being connected to the first-layered first coil and the second-layered second coil being connected to the first-layered second coil through the plurality of penetration holes.

Common mode filter and method for manufacturing the same

Disclosed herein is a method for manufacturing a high frequency inductor, the method including; forming a primary coil for manufacturing the high frequency inductor on a wafer; coating a primary PSV on the wafer on which the primary coil is formed; forming a secondary coil for manufacturing the high frequency inductor, after the coating of the primary PSV; coating a secondary PSV, after the forming of the secondary coil; forming a barrier layer on an electrode portion to be exposed of the high frequency inductor, after the coating of the secondary PSV; filling and curing an insulating resin on the wafer, after the forming of the barrier layer; and polishing the cured resin up to the barrier layer to expose the electrode.

Method for manufacturing high frequency inductor

The present invention relates to a stacked wafer level package and a method of manufacturing the same. The stacked wafer level package in accordance with the present invention can improve a misalignment problem generated in a stacking process by performing a semiconductor chip mounting process, a rearrangement wiring layer forming process, the stacking process and so on after previously bonding internal connection means for interconnection between stacked electronic components to a conductive layer for forming a rearrangement wiring layer, thereby improving reliability and yield and reducing manufacturing cost.

Stacked wafer level package and method of manufacturing the same

A method of manufacturing a stacked wafer level package includes: preparing a substrate; forming a conductive layer on the substrate; forming chip connection pads and internal connection pads on the conductive layer; forming solder balls connected to the internal connection pads; mounting a semiconductor chip on the conductive layer to be connected to the chip connection pads; forming a sealing member to seal the solder balls and the semiconductor chip; separating the substrate from the conductive layer; forming a rearrangement wiring layer by etching the conductive layer; forming an external connection on the rearrangement wiring layer; forming contact holes in the sealing member to expose the solder balls; and stacking an electronic component to be electrically connected to the solder balls exposed through the contact holes.

Method of manufacturing stacked wafer level package

The present invention relates to a method of manufacturing a semiconductor package capable of simplifying a process and remarkably reducing a production cost by including the steps of: preparing a different bonded panel including at least one metal layer; forming a pad unit electrically connected to the metal layer; mounting a semiconductor chip over the different bonded panel to be electrically connected to the pad unit; sealing the semiconductor chip; forming a rearrangement wiring layer by etching the metal layer; and forming an external connection unit electrically connected to the rearrangement wiring layer.

Method of manufacturing semiconductor package by etching a metal layer to form a rearrangement wiring layer

A wafer level package and a manufacturing method thereof capable of reducing stress between an under bump metal and a bump. The wafer level package includes a substrate provided with a plurality of chip pads on a top surface; a first passivation layer to expose the chip pads; vias connected to the chip pads by passing through the first passivation layer; a metal wiring layer formed on the first passivation layer and connected to the vias; an under bump metal formed on the first passivation layer to be connected to the metal wiring layer and having a buffer pattern separated through a trench on a center; a second passivation layer formed on the first passivation layer to expose the under bump metal; a first bump formed on the buffer pattern; and a second bump filling the trench and formed on the first bump and the under bump metal.

Growing community of inventors

Incheon-si, South Korea

Jong Yun Lee