Skhynix Inc.

Jong-Young Cho

Eung-Rim Hwang

Sang-Soo Kim

In-Hoe Kim

Young-Min Na

Ok-Min Moon

Gwang-Won Lee

A method for fabricating an electronic device including a semiconductor memory may include: forming a material layer over a substrate; forming a material pattern by etching the material layer, the etching providing an etch residue on sidewalls of the material pattern; and removing the etch residue, wherein removing of the etch residue includes performing a cleaning process using a cleaning composition including water and a fluorine-containing compound or an amine, and having a pH in a range of 7 to 14.

Cleaning composition and method for fabricating electronic device using the same

An electronic device is provided. An electronic device according to an implementation of the disclosed technology is an electronic device including a semiconductor memory, wherein the semiconductor memory includes: a substrate including a first region in which a plurality of memory cells are disposed and a second region adjacent to the first region; a first interlayer insulating layer disposed over the substrate; a plurality of first memory cells penetrating through the first interlayer insulating layer in the first region, an uppermost portion of each memory cell of the first memory cells having a first conductive carbon-containing pattern; and a first insulating carbon-containing pattern located over the first interlayer insulating layer in the second region.

Electronic device and method for fabricating the same

Growing community of inventors

Hanam-si, South Korea

Jong-Young Cho