Samsung Electronics Co., Ltd.

Jong Woo Sun

Je Woo Han

Jung Pyo Hong

Kwang Nam Kim

Doug Yong Sung

Chan Hoon Park

Yun Kwang Jeon

Masayuki Tomoyasu

Ho Chang Lee

Sung Moon Park

Seul Ha Myung

Young Hoon Jeong

Hak Young Kim

Yong Ho Lim

Jung Mo Sung

Hwa Jun Jung

Seung Yoon Song

Hyung Jun Kim

Hyung Joo Lee

Sung Yeon Kim

Sang Rok Oh

Jeong Il Mun

See Yub Yang

Kyeong Hun Kim

A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

Substrate processing apparatus and method of processing a substrate

A semiconductor processing apparatus includes a chamber housing, an electrostatic chuck disposed in the chamber housing, the electrostatic chuck being configured to hold a semiconductor wafer, an edge ring surrounding the electrostatic chuck, the edge ring including a ring electrode disposed within the edge ring, and a ring voltage supply configured to supply a ring voltage to the ring electrode, the ring voltage having a non-sinusoidal periodic waveform, wherein each period of the non-sinusoidal periodic waveform comprises a positive voltage applied during a first time period and a negative voltage applied during a second time period, and wherein the negative voltage has a magnitude that increases during the second time period.

Apparatus for manufacturing semiconductor device and manufacturing method of semiconductor device

A plasma processing device is provided with a chamber including a space that is configured to perform a treatment process for a wafer. A supporting member is disposed inside of the chamber and configured to support the wafer. A gas supply unit is configured to inject a mixed gas in different directions toward the supporting member. The pressure of the mixed gas is increased by adding inert gas to reactive gas.

Device for providing gas to a plasma chamber and a plasma processing device including the same

Substrate processing apparatus including edge ring

A plasma processing apparatus includes a chamber, a window plate disposed in an upper portion of the chamber and having a fastening hole defined therein, an injector having a body part including a plurality of nozzles and configured to be fastened to the fastening hole, and a flange part extending radially from the body part to partially cover a bottom surface of the window plate when the body part is fastened to the fastening hole, and a stopper configured to be fastened to the body part on an upper surface of the window plate to hold the injector in the fastening hole when the body part is fastened to the fastening hole.

Plasma processing apparatus

A plasma monitoring apparatus includes a reflective structure disposed on a processing chamber providing a space in which plasma for processing a substrate is formed, the reflective structure configured to receive fragments of light incident in a plurality of incident directions from the plasma, and output the fragments of light in a plurality of exit directions by reflecting the fragments of light within the reflective structure; at least one light sensor configured to receive the fragments of light passing through the reflective structure in the plurality of exit directions; and at least one optical spectrometer connected to the at least one light sensor.

Plasma monitoring apparatus, and plasma processing apparatus including the same

Growing community of inventors

Hwaseong-si, South Korea

Jong Woo Sun