Samsung Electronics Co., Ltd.

Korea Institute of Science and Technology

Jong-woo Park

Young-Hoon Chung

Jung-Dal Choi

Kang-yoon Lee

Dong-Gun Park

Yun-Gi Kim

Jae-Chul Lee

Hyun-Kwang Seok

Ho-In Lee

You-Cheol Shin

Chang-Hyun Lee

Jae-Kwan Park

Young-pil Kim

Duck-Hyung Lee

Seong-Soon Cho

Ki-jae Do

Kang-Yoon Lee

Won Choe

Tae-young Chung

Kyung-suk Cho

Yeh-Sun Hong

Jin-ho Kang

Soon-Ho Lim

Myung-Chul Shin

In-Ge Moon

Young-jae Choi

A method and apparatus to manage files of a portable device such as an mp3 player, a mobile phone, or a game console, the method comprising copying files to be played from a source server and storing the files in a file system on a folder-by-folder basis; determining the presence of files which have been changed in the portable device by checking the file system when the files are completely copied; and creating a playlist of the files, folder-by-folder, according to file path information of the file system when there are the changed files.

Method and apparatus to manage files for a portable device

An electrophotographic image forming apparatus including first and second photosensitive bodies, first and second exposing units to form electrostatic latent images on the first and second photosensitive bodies respectively charged to a uniform electric potential, a first developing unit to develop an electrostatic latent image of the first photosensitive body by supplying a color toner to the electrostatic latent image of the first photosensitive body, and a second developing unit in which a transparent toner and a white toner charged to different polarities are contained and which develops a transparent toner image and a white toner image by respectively supplying the transparent toner and the white toner to an image portion and a non-image portion of an electrostatic latent image of the second photosensitive body.

Electrophotographic image forming apparatus having transparent toner and white toner

An integrated circuit device includes a substrate having a trench formed therein. An isolation layer is disposed in the trench so as to cover a first sidewall portion of the trench and an entire bottom of the trench without covering a second sidewall portion of the trench. A buffer layer is disposed between the isolation layer and the trench. A gate insulating layer is disposed on the second sidewall portion of the trench and extends onto the substrate adjacent to the trench.

Integrated circuit devices having active regions with expanded effective widths

An integrated circuit device includes a substrate that has a trench formed therein. An isolation layer is disposed in the trench and covers a first sidewall portion of the trench. A gate electrode is disposed on a second sidewall portion of the trench.

A continuous shear deformation apparatus comprises: a roller for pushing a metal sheet to be processed into dies; the dies having an inlet for introducing a metal sheet, a shear deformation zone for shear-deforming the sheet, and an exit; and a control unit for controlling a gap of the dies exit depending on the compressive stress generated at the metal sheet while the metal sheet passes through the shear deformation zone of the dies. The compressive stress generated at the metal sheet becomes constant when the metal sheet is shear-deformed, and thereby the thickness of the metal sheet is uniformly controlled in a longitudinal direction.

Continuous shear-deformation apparatus for controlling thickness uniformity of a metal sheet

A non-volatile memory device includes a tunnel oxide layer, a charge storage layer, a blocking insulating layer, and a gate electrode that are sequentially stacked, as well as an impurity diffusion layer in an active region at both sides of the gate electrode. The gate electrode crosses active regions between device isolation layers formed in a predetermined area of a semiconductor substrate, and an edge of the charge storage layer is extended to have a protruding part that protrudes from the gate electrode. In order to form a charge storage layer having a protruding part, a stack insulating layer including first to third insulating layers is formed in an active region between the device isolation layers formed in the substrate. A plurality of gate electrodes crossing the active region are formed on the stack insulating layer, and a sidewall spacer is formed on both sidewalls of the gate electrode. Using the sidewall spacer and the gate electrode, the stack insulating layer is etched to form a charge storage layer that protrudes from the sidewall of the gate electrode.

Non-volatile memory device with protruding charge storage layer and method of fabricating the same

Methods of forming integrated circuit devices (e.g., memory devices) include the use of preferred self-aligned contact hole fabrication steps. These steps improve process reliability by reducing the likelihood that contact holes will become misaligned to underlying integrated circuit device structures and thereby potentially expose the structures in an adverse manner. Typical methods include the steps of forming a plurality of interconnection patterns on a substrate and then covering a surface of the interconnection patterns and a portion of the substrate with a capping insulating layer such as silicon nitride layer. The capping insulating layer is then covered with an upper interlayer insulating layer different from the capping insulating layer. The upper interlayer insulating layer and the capping insulating layer are then dry-etched in sequence to form a first narrow contact hole that exposes the substrate, but preferably does not expose the interconnection patterns. The first contact hole is then widened in a self-aligned manner using the capping insulating layer as an etch-stop layer. This widening step is performed by wet etching sidewalls of the first contact hole using an etchant that etches the upper interlayer insulating layer faster than the capping insulating layer. In this manner, the first contact hole may be formed to initially compensate for potential misalignment errors and then a self-aligned wet etching step may be performed to widen the first contact hole into a second contact hole so that low resistance contacts (e.g., contact plugs) can be provided therein.

Methods of forming self-aligned contact structures in semiconductor integrated circuit devices

An apparatus of superplastic forming for massive production is able to install a plurality of forming sheets and plates in one apparatus using dies of multi-layer structure and to form the sheets and plates with compressed gas, and therefore, a plurality of products can be fabricated rapidly and massively with a cheap facility investment. If preforms are used instead of flat blank sheets, the productivity can be improved greatly and the products of uniform thickness can be formed massively.

Apparatus for superplastic forming

A flash memory having a charge-storage dielectric layer and a method for forming the same are provided. According to one embodiment, charge-storage dielectric layers are formed over the first and second active regions. The charge-storage layer over the first active region is not connected to the charge-storage layer over the second active region. A gate line overlies the charge-storage layer and extends across the first and second active regions and the isolation region. The charge-storage layer can be formed only where a gate line intersects an active region of a semiconductor substrate, not on an isolation region. Thus, undesirable influence or disturbance from adjacent memory cells can be avoided.

Flash memory device and a method for fabricating the same

A flash memory having a charge-storage dielectric layer. According to one embodiment, charge-storage dielectric layers are formed over the first and second active regions. The charge-storage layer over the first active region is not connected to the charge-storage layer over the second active region. A gate line overlies the charge-storage layer and extends across the first and second active regions and the isolation region. The charge-storage layer can be formed only where a gate line intersects an active region of a semiconductor substrate, not on an isolation region. Thus, undesirable influence or disturbance from adjacent memory cells can be avoided.

Flash memory device with isolation regions and a charge storage dielectric layer formed only on an active region

Integrated circuit devices having active regions with expanded effective widths and methods of manufacturing same

The present invention relates to a continuous shear deformation device, in particular, which is capable of mass-producing shear deformed materials by continuously supplying a sharply bent channel type mold with materials, particularly, which have a variety of thickness from thin sheet to thick plate. The continuous shear deformation device in accordance with the present invention includes a sharply bent channel type mold and a rotary guide apparatus installed at the inlet of the mold for guiding materials into the mold by frictional contact with the materials. In addition, the present invention can additionally include a rotary guide for exiting the shear-deformed material.

Continuous shear deformation device

The present invention relates to a continuous shear deformation device. In order to occur shear deformation at the position at which a material is inserted into a molding path from a rotary guide apparatus for the purpose of solving the problem that the amount of shear deformation of a material is non-uniform and insufficient due to the gap between the curved portion of the molding path and the lower parts of the material, there is provided a continuous shear deformation device, characterized in that a curved portion is constructed by collaboration between the rotary guide apparatus and the molding path. In addition, there are provided additional constructions for effectively performing shear deformation by a small power by reducing the friction at the molding path excepting the curved portion. The present invention thusly constructed can be utilized for continuously and effectively mass-produce sheared materials.

The present invention relates to a shear deformation device. To improve the productivity by solving the problem that the amount of shear deformation of a material is not uniform and sufficient due to the gap between the curved portion of the molding path and the lower parts of the material and omitting any additional process for removing irregularity and surface products on the surface of the material, there is provided a shear deformation device capable of scalping, characterized in that a scalping guide path which allows the surface of the material to be separated from the other portions of the material as the material is scalped at a predetermined thickness when passing through the curved portion during shear deformation is formed in the curved portion in communication with the molding path. In addition, there are provided additional constructions for effectively performing shear deformation by a small power by reducing the friction at the molding path excepting the curved portion. The present invention thusly constructed can be utilized for continuously and effectively mass-produce sheared materials.

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Seoul, South Korea

Jong-woo Park