Samsung Electronics Co., Ltd.

Jong-Woo Ko

Sun-Pil Youn

Yoon-jong Song

Kyung-Chang Ryoo

Jae-min Shin

Jeong-Jin Lee

A non-volatile memory array includes an array of phase-changeable memory elements that are electrically insulated from each other by at least a first electrically insulating region extending between the array of phase-changeable memory elements. The first electrically insulating region includes a plurality of voids therein. Each of these voids extends between a corresponding pair of phase-changeable memory cells in the non-volatile memory array and, collectively, the voids form an array of voids in the first electrically insulating region.

Phase-changeable memory devices having reduced susceptibility to thermal interference

A phase change memory device and a method of forming the same include a conductive pattern formed on a substrate. A lower electrode contact is disposed on the conductive pattern. The phase change pattern is disposed on the lower electrode contact. An upper electrode is disposed on the phase change pattern. An area of an upper surface of the lower electrode contact is smaller than an area of a lower surface of the lower electrode contact.

Phase change memory device with a novel electrode

Provided is a semiconductor package including a high integration semiconductor chip and having a minimum area to be mounted on a circuit board. The semiconductor package includes a semiconductor chip, a plurality of inner leads, and an encapsulant. The plurality of inner leads include upper and bottom surfaces and are electrically connected to the semiconductor chip. The encapsulant covers the semiconductor chip and the plurality of inner leads. The upper surfaces of the plurality of inner leads are fixed to the encapsulant, portions of the bottom surfaces of the plurality of inner leads are exposed from the encapsulant, and the bottom surfaces of the plurality of inner leads are disposed at a different height from a bottom surface of the encapsulant.

Growing community of inventors

Gyeonggi-do, South Korea

Jong-Woo Ko