Tokyo Electron Limited

Jong Won Yun

Kouji Takuma

Go Ayabe

Ryo Manabe

A substrate processing apparatus includes: a substrate holding unit configured to hold and rotate a substrate; an etching unit configured to etch a surface of a substrate by discharging a processing liquid to the substrate rotated by the substrate holding unit; and a control unit configured to control an etching amount by the etching unit. In the substrate processing apparatus, the control unit controls an etching amount at each position on the surface of the substrate based on information upon a characteristic of a surface processing to be performed on the substrate by a post-processing apparatus which is configured to perform a post-processing after a substrate processing by the substrate processing apparatus.

Substrate processing apparatus, linked processing system, and substrate processing method

A substrate processing apparatusincludes processing unitseach configured to process a wafer W; tanksandeach configured to store a processing liquid; processing liquid supply unitsandeach configured to supply the processing liquid into the processing unit; drain unitsandeach configured to drain the processing liquid; supplement unitsandeach configured to supplement the tanksandwith the processing liquids; and a control unit. The control unitis configured to perform a process job by controlling the processing liquid supply unitsandand the processing unitand perform, when predetermined liquid exchange conditions are met during the performing of the process job, a liquid exchange processing in parallel with the process job by controlling the drain unitsandand the supplement unitsand

Substrate processing apparatus, substrate processing method and recording medium of performing liquid exchange processing according to liquid exchange condition

Growing community of inventors

Cheongju-si, South Korea

Jong Won Yun