Samsung Electronics Co., Ltd.

Lg Display Co., Ltd.

Jong-won Lee

Sang-rok Hah

Bo-un Yoon

Jae-Dong Lee

Yu-sung Joo

Yo-han Kim

Eun-kyo Baek

Chang-ki Hong

Hyun-kwon Chung

Kyung-Hyun Kim

Kwang-bok Kim

Jae-Phil Boo

Young-rae Park

Jung-Yup Kim

Sung-Chul Park

Hyun-Ju Hong

Kun-tack Lee

Jung-Ho Bang

Chang-Ki Hong

Chai-Man Lim

Sung-uk Ryu

Bo-an Yoon

Yo-Han Kim

Sung-Uk Ryu

Yu-Sung Yoo

A method of controlling a device includes determining a distance between the device and a hovering inputter; determining 3-dimensional (3D) location information of a hovering input based on the distance; selecting a task among a plurality of tasks corresponding to an operation of an application executed by the device and the 3D location information of the hovering input; determining a class of an execution input according to the hovering input; and performing the selected task according to the determined class of the execution input.

Method and system for controlling device

The present disclosure relates to a sensor network, Machine Type Communication (MTC), Machine-to-Machine (M2M) communication, and technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the above technologies, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. Provided are methods, apparatuses and systems for controlling an object displayed on a device, based on a hovering input obtained by the device.

Method of displaying object on device, device for performing the same, and recording medium for performing the method

A method for communication in an electronic device is provided. The method includes determining whether to control a communication module of the electronic device based on information related to communication between the electronic device and an external device, determining a control value for the communication module based on the determination, and controlling the communication module using the control value.

Apparatus and method for providing communication

A slurry composition useful for chemical mechanical polishing of the surface of a material layer, e.g., a silicon oxide layer, is disclosed. A first material surface which is exposed to the slurry exhibits hydrophilicity, while a second material layer, e.g., a polysilicon layer, the surface of which is also exposed to the slurry, exhibits hydrophobicity, and accordingly acts as a polishing stopping layer. The slurry composition consists essentially of water, abrasive grains, and a polymer additive having both hydrophilic and hydrophobic functional groups.

Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same

A CMP oxide slurry includes an aqueous solution containing abrasive particles and two or more different passivation agents. Preferably, the aqueous solution is made up of deionized water, and the abrasive particles are a metal oxide selected from the group consisting of ceria, silica, alumina, titania, zirconia and germania. Also, a first passivation agent may be an anionic, cationic or nonionic surfactant, and a second passivation agent may be a phthalic acid and its salts. In one example, the first passivation agent is poly-vinyl sulfonic acid, and the second passivation agent is potassium hydrogen phthalate. The slurry exhibits a high oxide to silicon nitride removal selectivity.

Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same

CMP (chemical/mechanical polishing) slurries that can rapidly remove a target layer and can effectively passivate a polishing stopper, with high selectivity. In one aspect, a CMP slurry comprises metal oxide abrasive particles, a removal rate accelerator, an anionic polymeric passivation agent having a molecular weight in a range of about 1,000 to about 100,000, a C1-C12 anionic passivation agent, and water.

Chemical/mechanical polishing slurry and chemical mechanical polishing method using the same

A method is provided for forming a metal interconnection using a plating process, which can improve the throughput and reliability of semiconductor devices by decreasing the required polishing in a chemical mechanical polishing process. A semiconductor device manufactured by this method is also provided. In the method of forming a metal interconnection, a recess region is formed in a portion of an insulation layer formed over a substrate, i.e., where a metal interconnection layer will be formed. A diffusion prevention layer is formed over the substrate, the insulation layer, and the recess region. Then, a metal seed layer is formed over the diffusion prevention layer only in the recess region using a chemical mechanical polishing process or an etch back process. A conductive plating layer is then formed on the metal seed layer only in the recess region. Thereafter, surface polarization is performed to form a metal interconnection layer in the recess region. The plating layer may be formed after forming the seed layer only in the bottom portion of the recess region.

Method of forming metal interconnection using plating and semiconductor device manufactured by the method

A chemical mechanical polishing slurry includes an additive of a quaternary ammonium compound having a form of &lcub;N&mdash;(R R R R )&rcub; X , in which R , R , R , and R are radicals, and X is an anion derivative including halogen elements. Preferably, the quaternary ammonium compound is one of &lsqb;(CH ) NCH CH OH&rsqb;Cl, &lsqb;(CH ) NCH CH OH&rsqb;l, &lsqb;(CH ) NCH CH OH&rsqb;Br, &lsqb;(CH ) NCH CH OH&rsqb;CO , and mixtures thereof. The slurry may further include a pH control agent formed of a base such as KOH, NH OH, and (CH ) NOH, and an acid such as HCl, H SO , H PO , and HNO . Also, the pH control agent can include &lsqb;(CH ) NCH CH OH&rsqb;OH. The slurry may further include a surfactant such as cetyldimethyl ammonium bromide, cetyldimethyl ammonium bromide, polyethylene oxide, polyethylene alcohol or polyethylene glycol.

Wafer polishing slurry and chemical mechanical polishing (CMP) method using the same

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Sungnam, South Korea

Jong-won Lee