Micron Technology Incorporated

Jong Won Lee

Gianpaolo Spadini

Derchang Kau

Fabio Pellizzer

Innocenzo Tortorelli

Tim Minvielle

Christina Papagianni

Jinwook Lee

Soonwoo Cha

Subject matter disclosed herein relates to a memory device, and more particularly to a self-aligned cross-point phase change memory-switch array and methods of fabricating same.

Self-aligned cross-point phase change memory-switch array

Material test structures having cantilever portions and methods of forming the same are described herein. As an example, a method of forming a material test structure includes forming a number of electrode portions in a first dielectric material, forming a second dielectric material on the first dielectric material, wherein the second dielectric material includes a first cantilever portion and a second cantilever portion, and forming a test material on the number of electrode portions, the first dielectric material, and the second dielectric material.

Material test structure

Memory arrays and methods of forming the same are provided. An example memory array can include at least one plane having a plurality of memory cells arranged in a matrix and a plurality of plane selection devices. Groups of the plurality of memory cells are communicatively coupled to a respective one of a plurality of plane selection devices. A decode logic having elements is formed in a substrate material and communicatively coupled to the plurality of plane selection devices. The plurality of memory cells and the plurality of plane selection devices are not formed in the substrate material.

Memory array plane select

Subject matter disclosed herein relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of fabricating a phase change memory device.

Keyhole-free sloped heater for phase change memory

A method of forming a semiconductor device may comprise forming a memory portion, forming a carbon film, depositing insulation to at least partially cover the carbon film, and terminating patterned removal of the insulation at the carbon film during a fabrication process.

Growing community of inventors

San Francisco, CA, United States of America

Jong Won Lee