Samsung Electronics Co., Ltd.

Jong-Wan Ma

Sung-hoon Bae

Jae-Hyeon Park

Sang-Jong Kim

Joon-Mo Kwon

A semiconductor device, including a substrate having an active region defined therein, a plurality of bit lines extending on the substrate in a first direction, a plurality of interconnection lines extending on the substrate in a second direction, a pad electrically connected to the plurality of interconnection lines and configured to apply an external voltage, a plurality of metal contacts electrically connecting the interconnection lines and the plurality of bit lines, and a plurality of bit line contacts that are in contact with the active region and electrically connect the plurality of bit lines and the active region, wherein a size of at least some of the bit line contacts and/or at least some of the metal contacts vary based on a distance of the respective bit line contact or the metal contact from the pad.

Semiconductor device

A semiconductor device includes an interlayer insulating layer on a semiconductor substrate, at least one plug on the semiconductor substrate, the plug extending through the interlayer insulating layer toward an upper portion of the semiconductor substrate, the plug having a lower part with a first diameter and an upper part with a second diameter different from the first diameter, a filling pattern on the interlayer insulating layer, the filling pattern surrounding the upper part of the plug, and an upper surface of the filling pattern being substantially coplanar with an upper surface of the plug, the upper surface of the plug facing away from the semiconductor substrate, and a protection pattern on the upper part of the plug, the protection pattern being between the plug, the filling pattern, and the interlayer insulating layer.

Growing community of inventors

Suwon-si, South Korea

Jong-Wan Ma