Samsung Electronics Co., Ltd.

Jong-wan Kim

Chul-woo Park

Ho-jung Kim

Myoung-jae Lee

Sang-beom Kang

Sung-chul Lee

Seung-eon Ahn

Eun-hong Lee

In-Kyeong Yoo

Young-Pil Kim

Dong-Chul Kim

Hyun-Ho Choi

Joon-seop Kwak

Su-hee Chae

In a memory device and in a method for controlling a memory device, the memory device comprises a magnetic structure that stores information in a plurality of domains of the magnetic structure. A read unit reads information from at least one of the plurality of domains of the magnetic structure by applying a read current to the magnetic structure. A position detector unit compares the information read by a read current from the read unit from multiple domains of the plurality of domains of the magnetic structure to identify the presence of an expected information pattern at select domains of the plurality of domains.

Identification of data positions in magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices

A nonvolatile memory device having self-presence diode characteristics, and/or a nonvolatile memory array including the nonvolatile memory device may be provided. The nonvolatile memory device may include a lower electrode, a first semiconductor oxide layer on the lower electrode, a second semiconductor oxide layer on the first semiconductor oxide layer, and/or an upper electrode on the second semiconductor oxide layer.

Nonvolatile memory device and nonvolatile memory array including the same

A memory device is comprised of a magnetic structure that stores information in a plurality of domains of the magnetic structure. A write unit writes information to at least one of the plurality of domains of the magnetic structure by applying a write current to the magnetic structure in response to a control signal. A read unit reads information from at least one of the plurality of domains of the magnetic structure by applying a read current to the magnetic structure in response to the control signal. A domain wall movement control unit is coupled to a portion of the magnetic structure and moves information stored in the plurality of domains in the magnetic structure to other domains in the magnetic structure in response to the control signal. The write unit, the read unit and the domain wall movement control unit are all coupled to the same control signal line that provides the control signal.

Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices

Provided is a light emitting device assembly. The light emitting device assembly includes a submount including bumps, each having a bonded surface and a lateral surface surrounding the bonded surface; and a light emitting device including pads, each having a bonded surface corresponding to a bonded surface of a corresponding bump. Herein, edges of the bonded surface of each of the bumps are spaced a predetermined distance inward from edges of a corresponding pad.

Light emitting device assembly

Growing community of inventors

Seongnam-si, South Korea

Jong-wan Kim