Samsung Electronics Co., Ltd.

Jong Uk Seo

Mi Hyun Kim

Young Hwan Park

Young Jo Tak

Joo Sung Kim

Sang Don Lee

Yong Il Kim

Suk Ho Yoon

Sam Mook Kang

Keon Hun Lee

Kee Won Lee

Ho Young Lee

Min Ho Kim

Tan Sakong

Dong Gun Lee

Ji Hye Yeon

A method of manufacturing a semiconductor light emitting device, the method including forming a first conductivity-type semiconductor layer on a substrate; forming an active layer on the first conductivity-type semiconductor layer; forming a mask layer having an opening on the active layer; growing a second conductivity-type semiconductor layer through the opening; removing the mask layer; removing a portion of the active layer and a portion of the first conductivity-type semiconductor layer that do not overlap the second conductivity-type semiconductor layer; and removing a portion of the first conductivity-type semiconductor layer to expose the substrate.

Method of manufacturing semiconductor light emitting device

A light emitting diode display device is provided. The light emitting diode display device includes a first light emitting diode pixel including a first light emitting diode layer and a first color conversion material on the first light emitting diode layer, a second light emitting diode pixel including a second light emitting diode layer and a second color conversion material on the second light emitting diode layer, a separation film disposed between the first light emitting diode layer and the second light emitting diode layer and a partition disposed between the first color conversion material and the second color conversion material and including a partition material, wherein the first and second light emitting diode pixels are divided by the separation film and the partition, the partition is disposed on the separation film in alignment with the separation film such that the partition includes linear portions that extend in a first direction and the separation film includes linear portions that also extend in the first direction and vertically overlap the linear portions of the partition, and the partition material includes an insulating material different from silicon.

Light emitting diode display device with separation film and partition aligning to each other

An ultraviolet semiconductor light emitting device includes a semiconductor stack, a trench, a filling insulator, and first and second electrodes. The semiconductor stack includes first and second conductivity-type semiconductor layers and an active layer therebetween that includes an AlGaN semiconductor material. The trench extends through the second conductivity-type semiconductor layer and the active layer to the first conductivity-type semiconductor layer and has a first width. The filling insulator fills the trench such that the filling insulator extends at least through the active layer in the trench and includes of an insulating material having a particular refractive index. The first electrode is connected to the first conductivity-type semiconductor layer, and the second electrode is connected to the second conductivity-type semiconductor layer.

Ultraviolet semiconductor light emitting devices

A semiconductor light emitting device includes a light emitting stack including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a plurality of holes through the second conductive semiconductor layer and the active layer, a trench extending along an edge of the light emitting stack, the trench extending through the second conductive semiconductor layer and the active layer, and a reflective metal layer within the plurality of holes and within the trench.

Semiconductor light emitting device

A light emitting device package includes a package substrate and a submount on the package substrate. An upper surface of the submount includes a central region, first and second base regions spaced from the package substrate, relative to the central region, and a sloped region between the central region and the first and second base regions. A light emitting device chip is in the central region. A first electrode layer is between the central region and the light emitting device chip and extends onto the sloped region and the first base region. A second electrode layer is between the central region and the light emitting device chip, extends onto the sloped region and the second base region, and is spaced apart from the first electrode layer. First and second reflective layers are on the first and second electrode layers, respectively, and overlap the sloped region.

Light emitting device package

A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single crystal layer is grown on the first nitride single crystal layer having the etch pits formed therein.

Method for fabricating nitride semiconductor thin film and method for fabricating nitride semiconductor device using the same

A method of fabricating a nitride semiconductor light emitting device is provided. The method includes growing a first group-III-nitride semiconductor layer on a substrate, the first group-III-nitride semiconductor layer having a top surface formed as a group-III-rich surface exhibiting a group-III-polarity and a bottom surface formed as a N-rich surface exhibiting a N-polarity. The method further includes selectively etching a N-polarity region in the top surface of the first group III nitride semiconductor layer, forming a second group III nitride semiconductor layer on the first group III nitride semiconductor layer to fill the etched N-polarity region and forming a light emitting structure including first and second conductivity type nitride semiconductor layers and an active layer on the second group III nitride semiconductor layer.

Growing community of inventors

Hwaseong-si, South Korea

Jong Uk Seo