Samsung Electronics Co., Ltd.

S-printing Solution Co., Ltd.

Jong-Uk Kim

Young-chae Kim

Shin-hyup Kang

Jeong-Hee Park

Soon-Oh Park

Young-Min Ko

Jung-hwan Park

Jung-Moo Lee

Sug-woo Jung

Yong-Nam Ahn

Soo-han Park

Kwangmin Park

Dong-Ho Ahn

Do-hyung Kim

Jung-gug Pae

Woong-Yong Choi

Sung-Lae Cho

Jong-hwa Joo

Seong-su Park

Kwang-Min Park

Ichiro Morishita

Byongju Kim

Byong-Ju Kim

Yong-han Yoon

Joji Anzai

Seok-juno Kim

Dong-Sung Choi

Moon-hwan Lee

Jung-chan Moon

A variable resistance memory device may include a memory unit including a first electrode disposed on a substrate, a variable resistance pattern disposed on the first electrode and a second electrode disposed on the variable resistance pattern, a selection pattern disposed on the memory unit, and a capping structure covering a sidewall of the selection pattern. The capping structure may include a first capping pattern and a second capping pattern sequentially stacked on at least one sidewall of the selection pattern. The first capping pattern may be silicon pattern, and the second capping pattern may include a nitride.

Variable resistance memory device including silicon capping pattern

There is provided a variable resistance memory device including a first electrode line layer including first electrode lines extending in a first direction and spaced apart from each other on a substrate, a second electrode line layer that is above the first electrode line layer and including second electrode lines extending in a second direction orthogonal to the first direction and spaced apart from each other, and a memory cell layer including memory cells between the first electrode line layer and the second electrode line layer. Each of the memory cells includes a selection device layer, an intermediate electrode layer, and a variable resistance layer. A first insulating layer is between the first electrode lines, a second insulating layer is between the memory cells, and a third insulating layer is between the second electrode lines. The second insulating layer includes air gaps on side surfaces of the memory cells.

Variable resistance memory devices

A method of manufacturing a magnetoresistive random access memory device, the method including forming a memory structure on a substrate, the memory structure including a lower electrode, a magnetic tunnel junction structure, and an upper electrode sequentially stacked; forming a first capping layer to cover a surface of the memory structure by a deposition process using a plasma under first conditions; and forming a second capping layer on the first capping layer by a deposition process using a plasma under second conditions different from the first conditions.

Magnetoresistive random access memory device

Magnetoresistive random access memory device and method of manufacturing the same

Package for a printer component

Toner cartridge

Packaging for a printer component

A variable resistance material layer including germanium (Ge), antimony (Sb), tellurium (Te), and at least one type of impurities X. The variable resistance material layer having a composition represented by a chemical formula of X(GeSbTe), wherein an atomic concentration of the impurities X is in a range of 0&#x3c;p&#x2266;0.2, an atomic concentration of Ge is in a range of 0.05&#x2266;a&#x3c;0.19, and an atomic concentration of Te is in a range of 0.42&#x2266;b&#x2266;0.56.

Variable resistance material layers and variable resistance memory devices including the same

Developing device for a printer

An optical pick-up apparatus for reproducing information recorded on an optical recording medium or recording information on the optical recording medium is provided. The optical pick-up apparatus includes a light source unit which generates beams; a diffraction element which diffracts the generated beams; and an objective lens which focuses a p order diffracted beam which is used for recording and reproducing information among a plurality of diffracted beams which are diffracted by the diffraction element on any one of a plurality of information layers which are formed on an optical recording medium. A p&#xb1;1 order diffracted beam which is not used for recording and reproducing information is focused away from the plurality of information recording layers and on the surface of the optical recording medium.

Optical pick-up apparatus with diffractive optical element and optical recording/reproducing apparatus having the same

A photodetector detecting reflected light components from an optical medium, the photodetector including a first detector divided into eight sections detecting the reflected light components and converting the light components into electrical signals, a first calculating portion calculating a first tracking error signal from the electrical signals by a differential push-pull method, a second calculating portion calculating a first focusing error signal by an astigmatism method and calculating a second tracking error signal by a differential phase detection method from the electrical signals converted by the first detector; a second detector divided into four sections detecting the reflected light components reflected by the optical recording medium to convert the light components into electrical signals; and a third calculating portion calculating a second focusing error signal by the astigmatism method and calculating a third tracking error signal by the differential phase detection method from the electrical signals converted by the second detector.

Photo diode ic

An optical pickup including a moving unit including a lens holder on which an objective lens is positioned, a set of suspension wires to movably support the lens holder on a base of the optical pickup actuator, each suspension wire having one end fixed to a side of the lens holder, and the other end fixed to connection portions positioned at opposite sides of a tilt spring, the tilt spring including a middle portion, between the connection portions, to be connected to a holder positioned on the base, and bridge portions to connect the middle portion to each of the connection portions, the bridge portions flexibly deforming when the moving unit is driven, and a magnetic circuit installed at the lens holder and the base to drive the moving unit.

Optical pickup actuator

Growing community of inventors

Yongin-si, South Korea

Jong-Uk Kim