Electronics and Telecommunications Research Institute

Jong Tae Baek

Chi Hoon Jun

Youn Tae Kim

Chang Auck Choi

Won Ick Jang

Yong Il Lee

Min Soo Kim

Jong Hyun Lee

Bo Woo Kim

Hyung Joun Yoo

A fine inductor having a 3-dimensional coil structure is disclosed. The inductor includes an insulating layer having a groove, a plurality of first conductive patterns wherein the respective first conductive patterns cover bottom and both walls of the groove formed in the insulating layer, both ends of the respective first conductive patterns are extended over upper surface of both sides of the groove, and each of the first conductive patterns is disposed at a predetermined space between adjacent first conductive patterns, and a plurality of second conductive patterns wherein one ends of the respective second conductive patterns are connected to the one ends of the first conductive patterns extended over upper surface and the other ends of the respective second conductive patterns are connected to the other ends of the adjacent first conductive patterns extended over upper surface, thereby forming a coil structure together with the first conductive patterns.

Fine inductor having 3-dimensional coil structure and method for producing the same

A chemical vapor deposition apparatus and a copper film formation method are disclosed. The chemical vapor deposition apparatus includes a process gas delivery unit including a first storing unit using a liquid deposition source, a delivery unit for transferring a liquid deposition source in the first storing unit to an evaporator, and an evaporator for vaporizing the liquid deposition source transferred from the delivery unit and supplying a process gas; and a reaction chamber for receiving the process gas from the process gas delivery unit and deposition a predetermined thin film on a wafer or substrate mounted therein.

Method for forming copper film using chemical vapor deposition

This invention discloses a programmable mask for exposure apparatus which is formed by an integrated pixels of a micro-devices which shut or open a light by an electrical signal. This invention provides a photolithography method by projecting on a silicon wafer a directly designed circuit pattern which is made on a programmable mask fabricated by an integration of many a micro optical shutter devices as a pixels.

Programmable mask for exposure apparatus

An improved method for forming diffusion barrier layers for sub-micron connects in integrated circuits is disclosed. The dual diffusion barriers is easily formed according to two-step annealing processes. The anneal includes two anneal cycles or steps, each cycle is performed at a separate and distinct temperature cycles. Each cycle is performed in the presence of ammonia (NH3) or nitrogen ambient. As a result of the first low-temperature cycle, a nitridation occurs at the upper surface to form a binary diffusion barrier layer. As a result of the second high-temperature cycle, an out-diffusion of silicon ions occurs at the lower surface to form a ternary alloys. The dual diffusion barriers obtained by a simple and easy two-step anneal processing exhibits an improved barrier performance. Furthermore, it is possible to form highly stable multilevel interconnections without any deterioration problems by reducing the sophisticated processing steps.

Method for forming diffusion barrier layers

A three elemental compound for diffusion barrier layer having a superior diffusion barrier characteristics manufactured by forming the compound between the silicon diffused into the diffusion barrier layer and the two elemental compound for diffusion barrier layer before the metal wire layer penetrates into the diffusion barrier layer to reach the underlying silicon layer, using the different characteristics of the diffusion rate as above, is disclosed. A method of forming three elemental compound for diffusion barrier layer according to the present invention comprises a silicon substrate. A silicide layer is deposited on the silicon substrate. A refractory metal nitride layer is then deposited on the silicide layer. A metal wire layer is deposited on the refractory metal nitride layer. A heat treatment of the resulting structure is performed to form a three elemental compound for diffusion barrier layer between the silicide layer and the refractory metal nitride layer by out-diffusing a silicon contained in the silicide layer and reacting the silicon introduced into the refractory metal nitride layer with the refractory metal nitride layer, such that the diffusion barrier characteristics is improved.

Growing community of inventors

Daejeon, South Korea

Jong Tae Baek