Korea Institute of Science and Technology

Samsung Electronics Co., Ltd.

Jong-sung Lim

Byung-Gwon Lee

Chang-Nyeon Kim

Han-Mei Choi

Bong-jin Kuh

Ki-chul Kim

Ji-Eun Lee

Hoon Sik Kim

Jung-Min Oh

Byoung Sung Ahn

Sang Deuk Lee

Young-sub You

Eun-ha Lee

Byung-Hong Chung

Kun You Park

Je-Woo Han

Gyung-Jin Min

Sang-Ryol Yang

Jun-ho Yoon

Joong-han Shin

Sang-ryol Yang

Hong-Gon Kim

Sang-Yoon Woo

Yong-Moon Jang

Jae-Duck Kim

Sang-deuk Lee

Tae-Jin Park

Hoon-Sik Kim

Jeong-meung Kim

Soon-wook Jung

Young-Sub Yoo

A method of forming an epitaxial layer includes forming a plurality of first insulation patterns in a substrate, the plurality of first insulation patterns spaced apart from each other, forming first epitaxial patterns on the plurality of first insulation patterns, forming second insulation patterns between the plurality of first insulation patterns to contact the plurality of first insulation patterns, and forming second epitaxial patterns on the second insulation patterns and between the first epitaxial patterns to contact the first epitaxial patterns, the first epitaxial patterns and the second epitaxial patterns forming a single epitaxial layer.

Methods of forming epitaxial layers

A semiconductor device includes a plurality of electrode structures perpendicularly extending on a substrate, and at least one support unit extending between the plurality of electrode structures. The support unit includes at least one support layer including a noncrystalline metal oxide contacting a part of the plurality of electrode structures. Related devices and fabrication methods are also discussed.

Integrated circuit devices including electrode support structures and methods of fabricating the same

Provided is a method of manufacturing a semiconductor device having a capacitor. The method includes forming a composite layer, including sequentially stacking on a substrate alternating layers of first through nth sacrificial layers and first through nth supporting layers. A plurality of openings that penetrate the composite layer are formed. A lower electrode is formed in the plurality of openings. At least portions of the first through nth sacrificial layers are removed to define a support structure for the lower electrode extending between adjacent ones of the plurality of openings and the lower electrode formed therein, the support structure including the first through nth supporting layers and a gap region between adjacent ones of the first through nth supporting layers where the first through nth sacrificial layers have been removed. A dielectric layer is formed on the lower electrode and an upper electrode is formed on the dielectric layer.

Method of fabricating semiconductor device

A refrigerant composition that can be a substitute for chlorodifluoromethane (HCFC-22) comprises: (a) a first constituent of difluoromethane, (b) a second constituent of 1,1,1-trifluoroethane, (c) a third constituent of 1,1,1,2-tetrafluoroethane, and (d) a fourth constituent selected from the group consisting of 1,1-difluoroethane, 1,1,1,2,3,3,3-heptafluoropropane, 1,1,1,2,3,3-hexafluropropane and butane.

Refrigerant composition comprising difluoromethane, 1,1,1-trifluoroethane and 1,1,1,2-tetrafluoroethane

A refrigerant composition that can be a substitute for chlorodifluoromethane (HCFC-22) comprises: (a) a first constituent of difluoromethane, (b) a second constituent of 1,1,1-trifluoroethane, (c) a third constituent of 1,1,1,2,3,3,3-heptafluoropropane and (d) a fourth constituent selected from the group consisting of isobutane, 1,1,1,2,3,3-hexafluropropane and butane; or comprises: (a) a first constituent of difluoromethane, (b) a second constituent of 1,1,1,2-tetrafluoroethane, (c) a third constituent of 1,1,-difluoroethane, and (d) a fourth constituent selected from the group consisting of 1,1,1,2,3,3,3-heptafluoropropane, 1,1,1,2,3,3-hexafluropropane and butane.

Refrigerant composition for replacing chlorodifluoromethane

A refrigerant composition that can be a substitute for chlorodifluoromethane (HCFC-22) comprises: (a) a first constituent of difluoromethane, (b) a second constituent of 1,1,1-trifluoroethane, (c) a third constituent of 1,1-difluoroethane, and (d) a fourth constituent selected from the group consisting of 1,1,1,2,3,3,3-heptafluoropropane, isobutane, 1,1,1,2,3,3-hexafluropropane and butane.

Refrigerant composition comprising difluoromethane, 1,1,1-trifluoroethane and 1,1-difluoroethane

The present invention relates to a refrigerant composition of four-constituent system, comprising: (a) a first constituent of difluoromethane, (b) a second constituent of 1,1,1,2,3,3,3-heptafluoropropane, (c) a third constituent selected from the group consisting of 1,1,1,2-tetrafluoroethane and 1,1-difluoroethane and (d) a for the constituent selected from the group consisting of isobutane, 1,1,1,2,3,3,-hexafluoropropane and butane, useful as a substitute for chlorodifluoromethane (HCFC-22).

Refrigerant composition

Refrigerant mixtures containing difluoromethane (HFC-32), pentafluoroethane (HFC-125) and 1,1,1,2-Tetrafluoroethane (HFC-134a)

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Seoul, South Korea

Jong-sung Lim