Korea Institute of Science and Technology

Industry-university Cooperation Foundation Sogang University

Samsung Electronics Co., Ltd.

Jong Sung Lim

Byung Gwon Lee

Kun You Park

Moon Jo Chung

Youn-Woo Lee

Young Hoon Kwon

Ki Pung Yoo

Seong Joon Cho

Gap Su Han

Soo Hyun Kim

Jong Min Park

Byoung Sung Ahn

Sang Deuk Lee

Jong Cheol Lee

Young Soo Kwon

Hyun-Nam Cho

Honggon Kim

Young Ha Kim

Yong Suk Tak

Kyu Ho Cho

Young Sub You

Bong Jin Kuh

Ji Won Pack

Young-Jae Hur

Dong Joo Mun

A capacitor is fabricated by forming a mold layer of a silicon based material that is not an oxide of silicon, e.g., polysilicon or doped polysilicon, on a substrate, forming an opening through the mold layer, forming a barrier layer pattern along the sides of the opening, subsequently forming a lower electrode in the opening, then removing the mold layer and the barrier layer pattern, and finally sequentially forming dielectric layer and an upper electrode on the lower electrode.

Method of forming a capacitor and method of manufacturing a semiconductor device using the same

A cleaning apparatus in which a cleaning process is simplified, a time required for the cleaning process is reduced and which has an excellent cleaning effect, and a high pressure cleaner for use therein are provided.

Cleaning apparatus and high pressure cleaner for use therein

Provided is a cleaning process which is simplified and in which a time required for the cleaning process is reduced and which has an excellent cleaning effect. The cleaning process comprises loading a wafer in a high pressure cleaner, injecting high-purity gaseous carbon dioxide (CO) having low pressure into the high pressure cleaner, injecting COhaving lower pressure than supercritical cleaning pressure into the high pressure cleaner, cleaning the wafer by injecting a supercritical homogeneous transparent phase mixture in which a cleaning additive and supercritical COare mixed, into the high pressure cleaner under a supercritical cleaning pressure, rinsing the wafer by injecting a supercritical rinsing mixture in which a rinsing additive and supercritical COare mixed, into the high pressure cleaner, and separating COfrom a mixture discharged from the high pressure cleaner.

Cleaning process

In polymerizing biodegradable polymer material, a compressed gas is used as a reaction solvent for a solution-polymerization, in order to prepare biodegradable polyester homopolymer and copolymer with a high molecular weight in a fine powder form with a particle size of 0.01&#x2dc;1000 &#x3bc;m.

Biodegradable polyester polymer and method for preparing the same using compressed gas

Disclosed is a method for preparing dimethyl dipropargylmalonate polymer containing exclusively six-membered ring structure by using supercritical or sub-critical carbon dioxide as a solvent with a transition metal chloride catalyst.

Method for preparing dimethyl dipropargylmalonate polymer containing six-membered ring structure

A novel refrigerant composition useful as a substitute for HCFC-22, comprising a first constituent of difluoromethane (CH F , HFC-32); a second constituent of pentafluoroethane (CHF CF , HFC-125); a third constituent of 1,1,1-trifluoroethane (CH CF , HFC-143a); a fourth constituent selected from the group consisting of cyclopropane (C H , RC-270), 1,1,1,2,3,3,3-heptafluoropropane (CF CHFCF , HFC-227ea), 1,1,1,2,2-pentafluoropropane (CH CF CF , HFC-245cb), isobutane (CH(CH ) CH , R-600a), octafluorocyclobutane (C F , RC-318), 1,1,1,2,3,3-hexafluoropropane (CHF CHFCF , HFC-236ea), butane (C H , R-600), bis(difluoromethyl)ether (CHF OCHF , HFE-134) and pentafluoroethylmethylether (CF CF OCH , HFE-245).

Refrigerant mixture comprising difluromethane, pentafluroethane and 1,1,1-trifluoroethane

A refrigerant composition useful as a substitute for chlorodifluoromethane (CHClF,, HCFC-22). The refrigerant composition has a first constituent of difluoromethane (CH,F,, HFC-32); a second constituent of 1,1,1-trifluoroethane (CH,CF,; namely, HFC-143a); and a third constituent selected from cyclopropane (C,H,, RC-270), 1,1,1,2,3,3,3-heptafluoropropane (CF,CHFCF,, HFC-227ea), 1,1,1,2,2-pentafluoropropane (CH,CF,CF,, HFC-245cb), 1,1,1,2,3,3-hexafluoropropane (CHF,CHFCF,, HFC-236ea), butane (C,H,, R-600), bis(difluoromethyl)ether (CHF,OCHF,, HFE-134) and pentafluoroethylmethylether (CF,CF,OCH,, HFE-245).

Refrigerant mixture comprising difluoromethane and 1,1,1-trifluoroethane

A refrigerant composition useful as a substitute for chlorodifluoromethane (CHCIF,, HCFC-22). The refrigerant mixture has a first constituent of difluoromethane (CH,F,, HFC-32); a second constituent selected from perfluoropropane (C,F8, PFC-218), cyclopropane (C,H6, RC-270) and butane (C,H,, R-600); and a third constituent selected from 1,1-difluoroethane (CH,CHF,, HFC-152a), 1,1,1,2,2-pentafluoropropane (CH,CF,CF3, HFC-245cb) and bis(difluoromethyl)ether (CHF,OCHF,, HFE-134).

Refrigerant mixture substitute for chlorodifluoromethane

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Seoul, South Korea

Jong Sung Lim