Samsung Electronics Co., Ltd.

Hyundai Electronics Industries Co. Ltd.

Akzo Nobel N.v.

Hyundai Electronics Industries

Jong Sung Kim

Gerrit Cornelis Dubbeldam

Freddy Gerhard Van Wijk

Young Jae Huh

Chung G Choi

Kyung Sun Min

Hee-Koo Yoon

Nico Maaskant

The present invention is in the field of optical recording media, and is directed to an optical recording medium which comprises the following layers;

Optical recording medium based on Fabry-Perot principle

In a recordable/replayable optical recording medium having a thin metal recording layer and an optical recording method therefor, the optical recording medium includes a substrate, a thin metal film formed on the substrate, a reflective layer arranged on the thin metal film, a buffering layer interposed between the thin metal film deformed by heat, and a protecting layer for protecting the deposited layers. Recording is facilitated by adopting a buffering layer and compatibility with conventional CD players is possible. Since expensive organic dyes are not necessary, manufacturing costs can be reduced and productivity can be greatly improved.

Recordable/replayable optical recording medium and optical recording

A DRAM having a vertical transistor of a highly integrated semiconductor device and its manufacturing method are disclosed. A DRAM has a silicon substrate, a word line formed in a silicon substrate, a gate oxide layer formed on the side wall of the word line, a bit line junction region formed on the bottom of a silicon substrate, a bit line that is connected to the a bit line junction region and is insulated from the word line via a first insulating layer, a charge storage electrode junction region formed near the bottom of silicon substrate surface, a pad polysilicon layer that is insulated from the a word line via a second insulating layer and is connected at the top of a charge storage electrode diffusion region, and a charge storage electrode that is connected to the pad polysilicon layer through a contact. Accordingly, a channel region is formed on a silicon substrate positioned on the side wall of a word line by applying the voltage to the word line and thus a signal transmitter is mutually transferred from the bit line to the charge storage electrode.

Dynamic random access memory having a vertical transistor

Method of making dynamic random access memory having a vertical

Growing community of inventors

Sungnam, South Korea

Jong Sung Kim