Samsung Electronics Co., Ltd.

Jong Sun Maeng

Sung Tae Kim

Suk Ho Yoon

Bum Joon Kim

Young Sun Kim

Hyun Wook Shim

Ki Sung Kim

Hyun Seok Ryu

Jung Hyun Lee

Jun Youn Kim

Ki Ho Park

Sung Min Choi

Kyung Ho Yoo

Boung Kyun Kim

A semiconductor light emitting device includes: an n-type semiconductor layer and a p-type semiconductor layer; an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer; and an electron blocking layer disposed between the active layer and the p-type semiconductor layer and doped with a p-type dopant element. The electron blocking layer is formed of AlGaN, where 0&#x3c;x&#x2266;1. A plurality of first regions blocking overflow of electrons from the active layer to the p-type semiconductor layer and a plurality of second regions formed of InN are alternately disposed within the electron blocking layer.

Semiconductor light emitting device

A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.

Chemical vapor deposition apparatus and method of forming semiconductor epitaxial thin film using the same

A nitride-based semiconductor light emitting device includes an anti-bowing layer having a composition of AlGaN (0.01&#x2266;x&#x2266;0.04), and a light emitting structure formed on the anti-bowing layer and including a first conductivity-type nitride semiconductor layer, an active layer, and a second conductivity-type nitride semiconductor layer.

Nitride-based semiconductor light emitting device

There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.

Method of manufacturing semiconductor light emitting device

Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers.

CVD apparatus and method of forming semiconductor superlattice structure using the same

Growing community of inventors

Gwangju, South Korea

Jong Sun Maeng