Asm Genitech Korea Ltd.

Asm IP Holding B.v.

Jong Su Kim

Jeong Ho Lee

Hyung Sang Park

Seung Woo Choi

Hyun Soo Jang

Dong Rak Jung

Chun Soo Lee

Yong Min Yoo

Young Hoon Kim

Woo Chan Kim

Tae Ho Yoon

Ju Hyuk Park

Hak Yong Kwon

Seung Hwan Lee

Sung Bae Kim

Susceptor for semiconductor substrate supporting apparatus

Electrode plate for semiconductor manufacturing apparatus

Substrate supporting arm for semiconductor manufacturing apparatus

A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.

Deposition apparatus

Cyclical methods of depositing a ruthenium layer on a substrate are provided. In one process, initial or incubation cycles include supplying alternately and/or simultaneously a ruthenium precursor and an oxygen-source gas to deposit ruthenium oxide on the substrate. The ruthenium oxide deposited on the substrate is reduced to ruthenium, thereby forming a ruthenium layer. The oxygen-source gas may be oxygen gas (O). The ruthenium oxide may be reduced by supplying a reducing agent, such as ammonia (NH) gas. The methods provide a ruthenium layer having good adherence to an underlying high dielectric layer while providing good step coverage over structures on the substrate. After nucleation, subsequent deposition cycles can be altered to optimize speed and/or conformality rather than adherence.

Methods of depositing a ruthenium film

A method for forming an amorphous silicon thin film is disclosed. In some embodiments, a method includes loading a substrate into a reaction chamber; and conducting a plurality of deposition cycles on the substrate. Each of at least two of the cycles includes: supplying a silicon precursor to the reaction chamber during a first time period; applying radio frequency power to the reaction chamber at least partly during the first time period; stopping supplying of the silicon precursor and applying of the radio frequency power during a second time period between the first time period and an immediately subsequent deposition cycle; and supplying hydrogen plasma to the reaction chamber during a third time period between the second time period and the immediately subsequent deposition cycle. The method allows formation of an amorphous silicon film having an excellent step-coverage and a low roughness at a relatively low deposition temperature.

Methods of forming an amorphous silicon thin film

Growing community of inventors

Cheonan-si, South Korea

Jong Su Kim