Samsung Electronics Co., Ltd.

Jong-Soon Park

Jong-Kyu Kim

Kyoung-Sub Shin

Jong-Chul Park

Seok-Woo Nam

Sang-Kuk Kim

Yil-hyung Lee

Yoo-Chul Kong

Hye-Ji Yoon

Woo-Hyun Lee

In an example embodiment a method of processing a substrate includes forming a plasma in a plasma chamber and using charged grids to form an ion beam and to thereby accelerate ions from the plasma chamber to a processing chamber. An auxiliary heater, which may be a radiant heater, may be used to pre-heat a grid to a saturation state to accelerate heating and concomitant distortion of the grid. A process recipe may pre-compensate for distortion of the grid.

Method of processing a substrate using an ion beam and apparatus for performing the same

Manufacturing an MRAM device may include forming an upper electrode on a magnetic tunnel junction stack, where the stack may include a lower electrode layer, a magnetic tunnel junction layer and a middle electrode layer that are sequentially formed on an insulating interlayer and a lower electrode contact on a substrate. The upper electrode may be formed on the middle electrode layer. An upper electrode protective structure may be formed to cover at least a sidewall and an upper surface of the upper electrode. The middle electrode layer, the magnetic tunnel junction layer and the lower electrode may be patterned by an etching process to form a middle electrode, a magnetic tunnel junction pattern and a lower electrode, respectively. The upper electrode protective structure may isolate the upper electrode from exposure during the patterning, and the upper electrode protective structure may remain on the upper electrode subsequently to the patterning.

Magnetoresistive random access memory devices and methods of manufacturing the same

Growing community of inventors

Suwon-si, South Korea

Jong-Soon Park