Samsung Electronics Co., Ltd.

Jong-soo Seo

Byung-Gil Choi

Ki-sung Kim

Jong-Chul Park

Chang-han Choi

Ho-keun Cho

A phase-change random access memory (PRAM) device includes a plurality of banks, a plurality of column redundancy cell arrays, and a plurality of column redundancy write drivers. Each of the plurality of column redundancy cell arrays corresponds to at least one of the banks. Each of the plurality of column redundancy write drivers corresponds to at least one of the column redundancy cell arrays. The column redundancy write drivers are configured to transmit respective redundancy test data to the corresponding ones of the column redundancy cell arrays in response to a test control signal, which may be activated in response to each program pulse for writing data. Related test and access methods are also discussed.

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Gyeonggi-do, South Korea

Jong-soo Seo