Samsung Electronics Co., Ltd.

Jong Shik Yoon

Changseop Yoon

An integrated circuit device includes a fin-type active area extending in a first horizontal direction on a substrate, a channel area on the fin-type active area, a gate line surrounding the channel area on the fin-type active area and extending in a second horizontal direction crossing the first horizontal direction, an insulating spacer structure covering gate sidewalls of the gate line and channel sidewalls of the channel area, wherein the insulating spacer structure includes an air spacer having a first portion facing the gate sidewalls in the first horizontal direction and a second portion facing the channel sidewalls in the second horizontal direction.

Growing community of inventors

Yongin-si, South Korea

Jong Shik Yoon